switching NPN transistor Changzhou Starsea Elec S8050 designed for multiple electronic circuit needs

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Product Description

Product Overview

The S8050 is a high-stability, high-reliability NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the S8550 transistor and is housed in a SOT-23 small outline plastic package. This transistor is suitable for various electronic circuits requiring efficient amplification and switching capabilities.

Product Attributes

Package Type: SOT-23 Small Outline Plastic Package
Material: Epoxy
Flammability Rating: UL: 94V-0
Mounting Position: Any
Marking: DN:S20G72Z071710A0
Brand: STAR SEA

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Collector-Base Voltage	VCBO			40	V
Collector-Emitter Voltage	VCEO			25	V
Emitter-Base Voltage	VEBO			5	V
Collector Current-Continuous	IC			500	mA
Collector Power Dissipation	PC			300	mW
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Thermal Resistance (Junction to Ambient)	RJA			417	/W
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=100uA, IC=0	5		V
Collector cut-off current	ICEO	VCE=20V, IB=0		100	nA
Collector cut-off current	ICBO	VCB=40V, IE=0		100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0		100	nA
DC current gain	hFE(1)	VCE=1V, IC=50mA	120	400
DC current gain	hFE(2)	VCE=1V, IC=500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.60	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA		1.20	V
Transition frequency	fT	VCE=6V, IC=20mA,f=30MHz		150	MHz