ChipNobo SI2309CDS T1 GE3 CN N channel MOSFET with continuous drain current of 2A in SOT 23 package
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Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SI2309CDS-T1-GE3-CN is a SOT-23 packaged N-channel MOSFET designed for various applications. It offers a continuous drain current of -2A and a pulsed drain current of -8A, with a maximum drain-source voltage of -60V. This device is suitable for use in residential and commercial equipment, providing reliable performance with its specified electrical characteristics and thermal management capabilities.
Product Attributes
- Brand: ChipNobo
- Product Marking: S09
- Package Type: SOT-23
- Origin: CN (implied by product marking)
Technical Specifications
| Symbol | Parameter | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | +20 | V | |||
| ID (at TA = 25C) | Drain Current (continuous) | -2 | A | |||
| IDM | Drain Current (pulsed) | -8 | A | |||
| PD(at TA = 25C) | Total Device Dissipation | 1500 | mW | |||
| RJA | Thermal Resistance Junction-Ambient | 83 | /W | |||
| TJ,Tstg | Junction/Storage Temperature | -55 | 150 | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | -60 | V | ID = -250uA, VGS=0V | ||
| VGS(th) | Gate Threshold Voltage | -1 | -1.65 | -2.4 | V | ID = -250uA, VGS= VDS |
| IDSS | Zero Gate Voltage Drain Current | 1 | uA | VGS=0V, VDS= -60V | ||
| IGSS | Gate Body Leakage | +100 | nA | VGS=+20V, VDS=0V | ||
| RDS(ON) | Static Drain-Source On-State Resistance | 168 | 185 | m | ID= -1.5A, VGS= -10V | |
| 220 | 270 | ID= -1.5A, VGS= -4.5V | ||||
| VSD | Diode Forward Voltage Drop | -1.2 | V | ISD= -1.5A, VGS=0V | ||
| CISS | Input Capacitance | 450 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| COSS | Common Source Output Capacitance | 20 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| CRSS | Reverse Transfer Capacitance | 18 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| Qg | Total Gate Charge | 11 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| Qgs | Gate Source Charge | 3 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| Qgd | Gate Drain Charge | 2 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| td(on) | Turn-ON Delay Time | 40 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| tr | Turn-ON Rise Time | 35 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| td(off) | Turn-OFF Delay Time | 15 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| tf | Turn-OFF Fall Time | 10 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.050 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.900 | 1.00 | 0.035 | 0.039 |
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.500 | 0.600 | 0.020 | 0.024 |
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
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