Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu

Surface Mount P Channel Enhancement Mode Transistor CHENMKO ENTERPRISE CHM9407AJPT for Motor Control

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The CHM9407AJPT is a P-Channel Enhancement Mode Field Effect Transistor from CHENMKO ENTERPRISE CO.,LTD. Designed with a super high-density cell structure for extremely low RDS(ON), this surface mount transistor offers high power and current handling capability. It is suitable for applications such as servo motor control, power MOSFET gate drivers, and other switching applications. This lead-free product is available in a small flat SO-8 package.

Product Attributes

  • Brand: CHENMKO ENTERPRISE CO.,LTD
  • Product Type: Surface Mount P-Channel Enhancement Mode Field Effect Transistor
  • Package Type: SO-8
  • Construction: P-Channel Enhancement
  • Certifications: Lead free product is acquired

Technical Specifications

Symbol Parameter Conditions Min Typ Max Units
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
VDSS Drain-Source Voltage -60 V
VGSS Gate-Source Voltage 20 V
ID Maximum Drain Current - Continuous -3.7 A
ID Maximum Drain Current - Pulsed A
PD Maximum Power Dissipation 2500 mW
TJ Operating Temperature Range -55 150 C
TSTG Storage Temperature Range -55 150 C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 3) 50 C/W
Electrical Characteristics (TA = 25C unless otherwise noted)
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -60 V
IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -1 A
IGSS Gate-Body Leakage VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -1 -3 V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-3.7A 88 130 m
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.1A (Note 2) 150 m
g FS Forward Transconductance VDS = -5V, ID = -3.7A 7 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -30V, VGS = 0V, f = 1.0 MHz 780 pF
Coss Output Capacitance VDS = -30V, VGS = 0V, f = 1.0 MHz 170 pF
Crss Reverse Transfer Capacitance VDS = -30V, VGS = 0V, f = 1.0 MHz 49 pF
SWITCHING CHARACTERISTICS (VDD = -30V, ID = -3.7A, VGS = -10V, RGEN = 6 (Note 4))
Qg Total Gate Charge 21 nC
Qgs Gate-Source Charge 13 nC
Qgd Gate-Drain Charge 9 nC
ton Turn-On Time 22 nS
tr Rise Time 48 nS
toff Turn-Off Time 21 nS
tf Fall Time 4.0 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current VGS = 0 V -1.3 A
VSD Drain-Source Diode Forward Voltage IS = -1.3A (Note 1, 2) -1.2 -3.0 V

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

Request A Quote

Please check your email address.
Your message must be at least 20 characters.