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SMD switching diode Comchip BAW56-HF with 6 nanoseconds reverse recovery time and 225mW power rating

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Product Description

Product Overview

The BAW56-HF, BAV70-HF/99-HF are SMD switching diodes from Comchip Technology, designed for fast switching applications with a reverse recovery time (Trr) of less than 6.0nS. These diodes offer high stability, reliability, and low reverse leakage, with a power dissipation of 225mW. They are suitable for various electronic applications requiring efficient switching.

Product Attributes

  • Brand: Comchip Technology
  • Origin: RoHS Device, Halogen Free
  • Case: SOT-23, molded plastic
  • Epoxy UL Rating: 94V-0
  • Mounting Position: Any

Technical Specifications

ParameterSymbolBAW56-HFBAV70-HFBAV99-HFUnitConditions
Reverse voltageVR707070V
Power dissipationPD225225225mW(at Ta=25C unless otherwise noted)
Peak forward surge currentIFSM222A@tp=1ms, TA=25C
Average rectified currentIo200200200mA
Non-repetitive peak forward currentIFM400400400mA
Typical thermal resistanceRJA500500500C/W
Operating junction temperatureTj150150150C
Storage temperature rangeTSTG-65 to +150-65 to +150-65 to +150C
Reverse leakage currentIR2.52.52.5AVR = 70V
CapacitanceCT666pFVR = 0V, f = 1 MHz
Reverse recovery timeTRR6.06.06.0nSIF = 150mA, IR = 15mA, RL = 100, Irr = 0.1 x IR
Forward voltageVF1.001.001.00VIF = 10mA
Forward voltageVF1.251.251.25VIF = 150mA
Forward voltageVF0.8550.8550.855VIF = 1mA
Forward voltageVF1.001.001.00VIF = 50mA
Reverse leakage currentIR100100100nAVR = 70V
Reverse leakage currentIR757575nAVR = 70V
Reverse leakage currentIR125125125nAVR = 70V
Reverse voltage RatingVRB707070VIB = 100A

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