High Voltage TRIAC DDF BTA08-600B with Low Thermal Resistance and 8 Amp RMS On State Current Rating
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Product Description
TRIAC BTA08
The TRIAC BTA08 from Shenzhen DingDeFeng Technology Co.,Ltd is a high-voltage and surge-capable triac featuring glass-passivated junctions, low thermal resistance, and durability. It is designed for mains power AC switching applications, including static relays, light dimmers, heater control, and motor speed controllers. The device offers excellent insulating voltage capabilities of 2500V(RMS).
Product Attributes
- Brand: DingDeFeng
- Origin: Shenzhen, China
- Product Type: TRIAC
- Model: BTA08
Technical Specifications
| Parameter | Symbol | BTA08-600(C/B) | BTA08-800(C/B) | BTA08-600(TW/SW/CW/BW) | BTA08-800(TW/SW/CW/BW) | Unit | |
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Repetitive Peak Off-State Voltages | VDRM, VRRM | 600 | 800 | 600 | 800 | V | |
| RMS on-State Current | IT(RMS) | 8 | A | ||||
| Non-Repetitive Peak On-State Current | ITSM | 80 | A | ||||
| I2t for fusing | I2t | 36 | A2s | ||||
| Repetitive rate of rise of on-state current after triggering | di/dt | 50 (I II III), 10 (IV) | 50 (I II III), 10 (IV) | 50 (I II III), 10 (IV) | 50 (I II III), 10 (IV) | A/uS | |
| Peak gate current | IGM | 4 | A | ||||
| Average Gate Power | PG(AV) | 1 | W | ||||
| Operating junction temperature | TJ | -40~+125 | |||||
| Storage Temperature | TSTG | -40 ~ +150 | |||||
| ELECTRICAL CHARACTERISTICS (TJ=25C) (4Q) | |||||||
| Parameter | Symbol | Test Conditions | C | B | Units | ||
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | VAK = Rated VDRM or VRRM; MAX | 5 | 5 | uA | ||
| Gate Trigger Current | IGT | VD=12V, RL=33 | MAX 50 (IV MAX 100) | MAX 50 (IV MAX 100) | mA | ||
| Gate Trigger Voltage | VGT | VD=12V, RL=33 | MAX 1.3 | MAX 1.3 | V | ||
| Gate NonTrigger Voltage | VGD | VD = VDRM, RL = 3.3 k, Tj = 125 C | MIN 0.2 | MIN 0.2 | V | ||
| Peak Forward On-State Voltage | VTM | IT=11A, MAX | 1.55 | 1.55 | V | ||
| Latch Current | IL | IG=1.2IGT | MAX 50 (II MAX 100) | MAX 50 (II MAX 100) | mA | ||
| Holding Current | IH | IT=0.1A | MAX 25 (II MAX 50) | MAX 25 (II MAX 50) | mA | ||
| Critical Rate of Rise of Off-State Voltage | dV/dt | VD=67%VDRM, TJ=25C, Gate open | MIN 200 | MIN 200 | V/s | ||
| ELECTRICAL CHARACTERISTICS (TJ=25C) (3Q) | |||||||
| Parameter | Symbol | Test Conditions | TW | SW | CW | BW | Units |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | VAK = Rated VDRM or VRRM; MAX | 5 | uA | |||
| Gate Trigger Current | IGT | VD=12V, RL=33 | MAX 5 | MAX 10 | MAX 35 | MAX 50 | mA |
| Gate Trigger Voltage | VGT | VD=12V, RL=33 | MAX 1.3 | V | |||
| Gate NonTrigger Voltage | VGD | VD = VDRM, RL = 3.3 k, Tj = 125 C | MIN 0.2 | V | |||
| Peak Forward On-State Voltage | VTM | IT=11A, MAX | 1.55 | V | |||
| Latch Current | IL | IG=1.2IGT | MAX 10 (II MAX 10) | MAX 30 (II MAX 30) | MAX 60 (II MAX 60) | MAX 80 (II MAX 80) | mA |
| Holding Current | IH | IT=0.1A | MAX 10 | MAX 15 | MAX 35 | MAX 50 | mA |
| Critical Rate of Rise of Off-State Voltage | dV/dt | VD=67%VDRM, TJ=25C, Gate open | MIN 20 | MIN 40 | MIN 400 | MIN 1000 | V/s |
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