NPN transistor DIODES FMMT493TA 100V medium power with 1A collector current in SOT23 compact package
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Product Description
Product Overview
The FMMT493 is a 100V NPN medium power transistor in a SOT23 package. It offers a high continuous collector current of 1A and a peak pulse current of 2A, with a power dissipation of 500mW. This device is suitable for high current gain hold-up applications and is available in a complementary PNP type, FMMT593. The FMMT493Q variant is AEC-Q101 qualified and suitable for automotive applications.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Automotive Qualification: FMMT493Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 120 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 100V |
| Emitter Cutoff Current | IEBO | 50 | nA | VEB = 5.6V |
| Collector Emitter Cutoff Current | ICES | 100 | nA | VCE = 100V |
| Static Forward Current Transfer Ratio | hFE | 100-600 | - | IC = 1mA to 1A, VCE = 10V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 300-600 | mV | IC = 500mA to 1A, IB = 50mA to 100mA |
| Base-Emitter Turn-On Voltage | VBE(on) | 1.0 | V | IC = 1A, VCE = 10V |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.15 | V | IC = 1A, IB = 100mA |
| Output Capacitance | Cobo | 10 | pF | VCB = 10V, f = 1MHz |
| Transition Frequency | fT | 150 | MHz | VCE = 10V, IC = 50mA, f = 100MHz |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Current | ICM | 2 | A | |
| Power Dissipation | PD | 500 | mW | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
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