Low Saturation Voltage PNP Transistor DIODES FMMT720TA Featuring 40V BVCEO and 4A Peak Pulse Current

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Product Description

Product Overview

The FMMT720 is a 40V PNP Silicon Low Saturation Transistor designed for high-performance applications. It offers a continuous collector current of -1.5A and a peak pulse current of -4A, with a low saturation voltage (VCE(sat)

Product Attributes

Brand: Diodes Incorporated
Product Line: Diodes Incorporated
Package: SOT23
Material: Molded plastic, "Green" molding compound
Certifications: AEC-Q101 Standards, Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free. Green Device
Compliance: PPAP capable

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Features
BVCEO	BVCEO	> -40	V
IC Continuous Collector Current	IC	-1.5	A
ICM Peak Pulse Current	ICM	-4	A
Low Saturation Voltage	VCE(sat)	< -220	mV	@ -1A
RCE(SAT)	RCE(SAT)	163	m
Power Dissipation	PD	625	mW	(@TA = +25C, Note 6)
hFE characterised up to		-3	A	for high current gain hold-up
Maximum Ratings
Collector-Base Voltage	VCBO	-40	V	(@TA = +25C)
Collector-Emitter Voltage	VCEO	-40	V	(@TA = +25C)
Emitter-Base Voltage	VEBO	-7	V	(@TA = +25C)
Continuous Collector Current	IC	-1.5	A	(@TA = +25C)
Peak Pulse Current	ICM	-4	A	(@TA = +25C)
Base Current	IB	-500	mA	(@TA = +25C)
Thermal Characteristics
Power Dissipation	PD	625	mW	(@TA = +25C, Note 6)
Power Dissipation	PD	806	mW	(@TA = +25C, Note 7)
Thermal Resistance, Junction to Ambient	RJA	200	C/W	(Note 6)
Thermal Resistance, Junction to Ambient	RJA	155	C/W	(Note 7)
Thermal Resistance, Junction to Leads	RJL	194	C/W	(Note 8)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
ESD Ratings
Electrostatic Discharge - Human Body Model	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	400	V
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	-40	V	IC = -100A
Collector-Emitter Breakdown Voltage	BVCEO	-40	V	IC = -10mA (Note 10)
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Collector Cutoff Current	ICBO	<1	nA	VCB = -35V
Emitter Cutoff Current	IEBO	<1	nA	VEB = -5.6V
Collector Emitter Cutoff Current	ICES	<1	nA	VCE= -35V
Static Forward Current Transfer Ratio	hFE	300	-	IC = -10mA, VCE = -2V
Static Forward Current Transfer Ratio	hFE	300	-	IC = -0.1A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	180	-	IC = -1A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	60	-	IC = -1.5A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	12	-	IC = -3A, VCE = -2V
Collector-Emitter Saturation Voltage	VCE(sat)	-26	mV	IC =- 0.1A, IB = -10mA
Collector-Emitter Saturation Voltage	VCE(sat)	-150	mV	IC = -1A, IB = -50mA
Collector-Emitter Saturation Voltage	VCE(sat)	-245	mV	IC = -1.5A, IB = -100mA
Base-Emitter Turn-On Voltage	VBE(on)	-0.80	V	IC = -1.5A, VCE = -2V (Note 10)
Base-Emitter Saturation Voltage	VBE(sat)	-0.89	V	IC = -1.5A, IB = -75mA (Note 10)
Output Capacitance	Cobo	19	pF	VCB = -10V, f = 1MHz
Transition Frequency	fT	150	MHz	VCE = -10V, IC = -50mA, f = 100MHz
Turn-On Time	ton	40	ns	VCC = -15V, IC = -0.75A, IB1 = IB2 = -15mA
Turn-Off Time	toff	435	ns	VCC = -15V, IC = -0.75A, IB1 = IB2 = -15mA