Silicon planar PNP transistor DIODES FZT951TA optimized for demanding power applications and high current

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Product Description

Product Overview

High-performance PNP silicon planar transistors designed for high current applications. These devices offer very low saturation voltages and excellent gain characteristics, making them suitable for demanding power applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Device Type	Complementary Type	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCEO)	Peak Pulse Current (ICM)	Continuous Collector Current (IC)	Power Dissipation (Ptot)	Collector-Base Breakdown Voltage (V(BR)CBO)	Collector-Emitter Breakdown Voltage (V(BR)CER)	Collector-Emitter Breakdown Voltage (V(BR)CEO)	Emitter-Base Breakdown Voltage (V(BR)EBO)	Collector Cut-Off Current (ICBO)	Collector Cut-Off Current (ICER)	Emitter Cut-Off Current (IEBO)	Collector-Emitter Saturation Voltage (VCE(sat))	Base-Emitter Saturation Voltage (VBE(sat))	Base-Emitter Turn-On Voltage (VBE(on))	Static Forward Current Transfer Ratio (hFE)	Transition Frequency (fT)	Output Capacitance (Cobo)	Switching Times (ton/toff)
FZT951	FZT851	-100 V	-60 V	-15 A	-5 A	3 W	-100 V	-100 V	-60 V	-6 V	-50 nA	-50 nA	-10 nA	-20 to -370 mV	-1080 to -1240 mV	-935 to -1070 mV	10 to 300	120 MHz	74 pF	82/350 ns
FZT953	FZT853	-140 V	-100 V	-10 A	-5 A	3 W	-140 V	-140 V	-100 V	-6 V	-50 nA	-50 nA	-10 nA	-20 to -460 mV	-1010 to -1170 mV	-925 to -1160 mV	15 to 300	125 MHz	65 pF	110/460 ns