100V NPN transistor DIODES ZXTN25100DFHTA with low saturation voltage and high gain in SOT23 package

Name: 100V NPN transistor DIODES ZXTN25100DFHTA with low saturation voltage and high gain in SOT23 package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

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Product Description

Product Overview

The ZXTN25100DFH is a 100V NPN low saturation transistor in a SOT23 package. It offers high gain, low saturation voltage (VCE(sat)

Product Attributes

Brand: Diodes Incorporated
Package: SOT23
Material: Molded Plastic, "Green" Molding Compound
Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Complementary PNP Part: ZXTP25100DFH

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Features
BVCEO	BVCEO	> 100	V
Collector Current	IC	2.5	A
Low Saturation Voltage	VCE(sat)	< 95	mV	@ 1A
RCE(sat)	RCE(sat)	80	m
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	180	V	@TA = +25C, unless otherwise specified.
Collector-Emitter Voltage	VCEO	100	V	@TA = +25C, unless otherwise specified.
Emitter-Base Voltage	VEBO	7	V	@TA = +25C, unless otherwise specified.
Collector-Emitter Voltage (Forward Blocking)	VCEX	180	V	@TA = +25C, unless otherwise specified.
Emitter-Collector Voltage (Reverse Blocking)	VECO	6	V	@TA = +25C, unless otherwise specified.
Base Current	IB	0.5	A	@TA = +25C, unless otherwise specified.
Continuous Collector Current	IC	2.5	A	@TA = +25C, unless otherwise specified.
Peak Collector Current	ICM	3	A	@TA = +25C, unless otherwise specified.
Thermal Characteristics
Power Dissipation	PD	0.73	W	@TA = +25C, mounted on 15mm x 15mm FR4 PCB
Thermal Resistance, Junction to Ambient	RJA	171	C/W	@TA = +25C, mounted on 15mm x 15mm FR4 PCB
Thermal Resistance, Junction to Case	RJC	13	C/W	@TA = +25C, mounted on minimum recommended pad layout FR4 PCB
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	180	V	IC = 100A
Collector-Emitter Breakdown Voltage	BVCEO	100	V	IC = 10mA
Emitter-Base Breakdown Voltage	BVEBO	7.0	V	IE = 100A
Collector Cutoff Current	ICBO	1	nA	VCB = 180V
Emitter Cutoff Current	IEBO	1	nA	VEB = 5.6V
DC Current Gain	hFE	300		IC = 10mA, VCE = 2V
Collector-Emitter Saturation Voltage	VCE(sat)	120	mV	IC = 0.5A, IB = 10mA
Base-Emitter Saturation Voltage	VBE(sat)	910	mV	IC = 2.5A, IB = 250mA
Output Capacitance	Cobo	8.7	pF	VCB = 10V, f = 1MHz
Transition Frequency	fT	175	MHz	VCE = 10V, IC = 100mA, f = 100MHz
Delay Time	td	16.4	ns	VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed)
Rise Time	tr	115	ns	VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed)
Storage Time	ts	763	ns	VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed)
Fall Time	tf	158	ns	VCC = 10V, IC = 500mA, IB1 = -IB2 = 50mA (Pulsed)