Durable ChipNobo IRG4PF50WPBF-CN transistor featuring low EMI and JEDEC qualification for industrial

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This product features advanced Field Stop technology, offering low switching power loss, low switching surge and noise, and low EMI. It boasts a maximum junction temperature of 175C and is qualified according to JEDEC standards for target applications. The product is Pb-free, halogen-free, and RoHS compliant, making it suitable for demanding industrial applications.

Product Attributes

Brand: ChipNobo
Certifications: JEDEC Qualified, RoHS Compliant
Material: Halogen-free Mold Compound
Plating: Pb-free Lead Plating

Technical Specifications

Model	VCE (V)	IC (A)	VCEsat @ Tvj=25C (V)	Tvjmax (C)	Package	Marking
IRG4PF50WPBF-CN / CI30T90X	900	30	1.65	175	TO247-3	L

Item	Symbol	Conditions	Min	Typ	Max	Unit
Electrical Characteristics	V(BR)CES	VGE= 0V, IC= 0.25mA	900	-	-	V
	ICES	VCE= 1000V, VGE= 0V	-	-	200	A
	IGES	VCE= 0V, VGE= 20V	-	-	200	nA
	VGE(th)	VCE= VGE, IC= 250A	5.0	5.5	6.0	V
	VCE(sat)	VGE= 15V, IC= 40A, Tvj= 25C	-	1.65	2.25	V
	VCE(sat)	VGE= 15V, IC= 40A, Tvj= 175C	-	-	2.4	V
	Cies	VCE= 25V, VGE= 0V f= 1MHz	-	9467	-	pF
Cies	VCE= 25V, VGE= 0V f= 1MHz	-	9467	-	pF
Coes	VCE= 25V, VGE= 0V f= 1MHz	-	132	-	pF
Cres	VCE= 25V, VGE= 0V f= 1MHz	-	65	-	pF
QG	VCC= 960V, IC= 40A, VGE= 15V	-	315	-	nC
VF	IF= 20A, Tvj= 25C	-	1.9	3.0	V
VF	IF= 20A, Tvj= 175C	-	1.87	-	V
Switching Characteristics (Tvj= 25C)	td(on)	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	80	-	ns
	tr	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	22	-	ns
	td(off)	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	173	-	ns
	tf	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	206	-	ns
	Eon	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	2.0	-	mJ
	Eoff	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	0.8	-	mJ
	Ets	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	2.8	-	mJ
	trr	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	37	-	ns
	Qrr	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	0.9	-	C
Irrm	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	45	-	A
Switching Characteristics (Tvj= 175C)	td(on)	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	90	-	ns
	tr	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	30	-	ns
	td(off)	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	186	-	ns
	tf	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	223	-	ns
	Eon	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	2.2	-	mJ
	Eoff	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	1.0	-	mJ
	Ets	VCC= 720V, IC= 28A, VGE= 15V, RG= 5, Inductive load	-	3.2	-	mJ
	trr	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	75	-	ns
	Qrr	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	3.7	-	C
Irrm	VCC= 720V, IF= 20A, diF/dt= 1900A/s	-	70	-	A
Thermal Resistance	Rth(j-a)	-	-	-	50	C/W
	Rth(j-c)	IGBT	-	-	0.29	C/W
	Rth(j-c)	Diode	-	-	0.44	C/W