NPN Low Saturation Transistor DIODES FMMT619TA Offering High Collector Current and Low On Resistance
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Product Description
FMMT619 50V NPN Silicon Low Saturation Transistor
The FMMT619 is a 50V NPN silicon low saturation transistor designed for various electronic applications. It offers a continuous collector current of 2A, low saturation voltage (VCE(sat)
Product Attributes
- Brand: DIODES
- Package: SOT23
- Material: Molded Plastic, Green Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Automotive-Compliant Part Available: FMMT619Q (Separate Datasheet)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 50 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 2 | A | |
| Peak Pulse Current | ICM | 6 | A | |
| Base Current | IB | 500 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 625 | mW | @TA = +25C, mounted on 25mm x 25mm FR4 PCB |
| Power Dissipation (Note 6) | PD | 806 | mW | @TA = +25C, measured at t 5 sec |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 200 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 155 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | 50 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-off Current | ICBO | 100 | nA | VCB = 40V |
| Emitter Cut-off Current | IEBO | 100 | nA | VEB = 6V |
| Collector Emitter Cut-off Current | ICES | 100 | nA | VCES = 40V |
| Static Forward Current Transfer Ratio | hFE | 200-450 | IC = 10mA, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 225-400 | IC = 200mA, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 100-225 | IC = 1A, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 40 | IC = 2A, VCE = 2V (Typ) | |
| Collector-Emitter Saturation Voltage | VCE(sat) | mV | IC = 1A, IB = 10mA (Max) | |
| Collector-Emitter Saturation Voltage | VCE(sat) | mV | IC = 2A, IB = 50mA (Max) | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.87-1.0 | V | IC = 2A, IB = 50mA (Typ Max) |
| Base-Emitter Turn-On Voltage | VBE(on) | 0.82-1.0 | V | IC = 2A, VCE = 2V (Typ Max) |
| Transition Frequency | fT | 100-165 | MHz | IC = 50mA, VCE = 10V, f = 100MHz (Min Typ) |
| Collector Output Capacitance | Cobo | 12-20 | pF | VCB = 10V, f = 1MHz (Typ Max) |
| Turn-On Time | ton | 170 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ) |
| Turn-Off Time | toff | 750 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ) |
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