High Current NPN Darlington Transistor DIODES FZT600TA Featuring SOT223 Package and Green Compliance
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Product Description
FZT600 / FZT600B 140V NPN Darlington Transistor in SOT223
The FZT600/FZT600B are high-performance NPN Darlington transistors designed for applications requiring high voltage and high current capabilities. These devices offer a high continuous collector current of 2A and a significant DC current gain greater than 10k, guaranteed up to 1A. Their robust construction and AEC-Q101 qualification ensure high reliability, making them suitable for demanding electronic circuits. The SOT223 package provides efficient heat dissipation and ease of integration into PCB designs.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223 (Type DN)
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to AEC-Q101 Standards
- Lead Finish: Matte Tin Plated
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | 160 | V | @TA = +25C | ||
| Collector-Emitter Voltage | VCEO | 140 | V | @TA = +25C | ||
| Emitter-Base Voltage | VEBO | 10 | V | @TA = +25C | ||
| Continuous Collector Current | IC | 2 | A | @TA = +25C | ||
| Peak Pulse Current | ICM | 4 | A | @TA = +25C | ||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 160 | V | IC = 100A | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 140 | V | IC = 10mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | 10 | V | IE = 100A | ||
| Collector-Base Cut-Off Current | ICBO | 0.01 | A | VCB = 140V | ||
| Collector-Emitter Cut-Off Current | ICES | 10 | A | VCES = 140V | ||
| DC Current Gain (FZT600) | hFE | 1000 | 100,000 | IC = 50mA, VCE = 10V | ||
| DC Current Gain (FZT600B) | hFE | 5000 | 100,000 | IC = 500mA, VCE = 10V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | 1.2 | V | IC = 1A, IB = 10mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.7 | 1.9 | V | IC = 1A, IB = 10mA | |
| Output Capacitance | Cobo | 10 | 15 | pF | VCB = 10V, f = 1MHz | |
| Current Gain-Bandwidth Product | fT | 150 | 250 | MHz | VCE = 10V, IC = 100mA, f=20MHz | |
| Turn-On Time | ton | 0.75 | s | VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA | ||
| Turn-Off Time | toff | 2.20 | s | VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA | ||
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