Power control DDF BTA41-1000BW TRIAC with glass passivated junction and 400A peak on-state current

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Product Description

TRIAC BTA41/BTB41

The TRIAC BTA41/BTB41 series from Shenzhen DingDeFeng Technology Co.,Ltd are glass passivated junction devices offering high voltage and surge capability. They feature low thermal resistance and durability, with an optional low thermal resistance ceramic insulator for insulated versions. These TRIACs are suitable for mains power AC switching applications including static relays, light dimmers, heater control, and motor speed controllers.

Product Attributes

Brand: DDF
Origin: Shenzhen DingDeFeng Technology Co.,Ltd
Insulating Voltage (BTA): 2500V(RMS)

Technical Specifications

Parameter	Symbol	BTA41/BTB41-600B	BTA41/BTB41-800B	BTA41/BTB41-1000	BTA41/BTB41-600(CW/BW)	BTA41/BTB41-800(CW/BW)	BTA41/BTB41-1000(CW/BW)	Unit
Repetitive Peak Off-State Voltages	VDRM, VRRM	600	800	1000	600	800	1000	V
RMS on-State Current	IT(RMS)	40						A
Non-Repetitive Peak On-State Current	ITSM	400						A
I2t for fusing	I2t	880						A2s
Repetitive rate of rise of on-state current after triggering	di/dt	50						A/uS
Peak gate current	IGM	8						A
Average Gate Power	PG(AV)	1						W
Operating junction temperature	TJ	-40~+125
Storage Temperature	TSTG	-40 ~ +150

Parameter	Symbol	Test Conditions	Quadrant	Min	Max	Unit
Peak Repetitive Forward or Reverse Blocking Current	IDRM IRRM	VAK = Rated VDRM or VRRM;	I-II-III		5	uA
Gate Trigger Current	IGT	VD=12V, RL=33	IV		100	mA
Gate Trigger Voltage	VGT	VD=12V, RL=33	I-II-III-IV	1.3		V
Non-triggering gate voltage	VGD	VD = VDRM ,Tj = 125C		0.2		V
Peak Forward On-State Voltage	VTM	IT=60A,	I-III-IV		1.55	V
Latch Current	IL	IG=1.2IGT	II		80	mA
Holding Current	IH	IT=0.5A			70	mA
Critical Rate of Rise of Off-State Voltage	dV/dt	VD=67%VDRM, Gate open		500		V/s

Parameter	Symbol	Test Conditions	Quadrant	Min	Max	Unit
Peak Repetitive Forward or Reverse Blocking Current	IDRM IRRM	VAK = Rated VDRM or VRRM;			5	uA
Gate Trigger Current	IGT		CW BW	35 50		mA
Gate Trigger Voltage	VGT	VD=12V, RL=33	I-II-III		1.3	V
Non-triggering gate voltage	VGD	VD = VDRM ,Tj = 125C		0.2		V
Peak Forward On-State Voltage	VTM	IT=60A,	I-III	70 80	1.55	V
Latch Current	IL	IG=1.2IGT	II	80 100		mA
Holding Current	IH	IT=0.5A		60 70		mA
Critical Rate of Rise of Off-State Voltage	dV/dt	VD=67%VDRM, TJ=25C, Gate open		500 1000		V/s