Diodes ZXTN618MATA NPN Transistor Offering Low RSAT and RoHS Compliance for Electronic Circuit Applications
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Product Description
Product Overview
The ZXTN618MA is a 20V NPN low saturation transistor designed for various electronic applications. It offers a high continuous collector current of 4.5A, low saturation voltage (150mV max @ 1A), and a low equivalent on-resistance (RSAT = 47 m). The device features specified hFE up to 6A for high current gain hold-up and comes in a low-profile 0.6mm high package with a small 4mm footprint. It is lead-free, RoHS compliant, and Halogen/Antimony free ("Green" Device). The ZXTN618MA is qualified to AEC-Q101 Standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Type Marking Code: SB
- Certifications: AEC-Q101 Standards, RoHS Compliant, UL Flammability Rating 94V-0
- Material: Molded Plastic ("Green" Molding Compound), Pre-Plated NiPdAu leadframe
- Origin: Not specified in document
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Condition |
| Collector-Base Voltage | VCBO | 40 | V | |
| Collector-Emitter Voltage | VCEO | 20 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Peak Pulse Current | ICM | 12 | A | |
| Continuous Collector Current | IC | 4.5 | A | @TA = 25C unless otherwise specified (Note 3) |
| Base Current | IB | 5 | A | |
| Power Dissipation | PD | 1.5 | W | @TA = 25C unless otherwise specified (Note 3) |
| Linear Derating Factor | 12 | mW/C | (Note 3) | |
| Thermal Resistance, Junction to Ambient | RJA | 83 | C/W | (Note 3) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | IC = 100 A |
| Collector-Emitter Breakdown Voltage | BVCEO | 20 | V | IC = 10 mA (Note 6) |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100 A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 30V |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 6V |
| Collector Emitter Cutoff Current | ICES | 100 | nA | VCES = 16V |
| Static Forward Current Transfer Ratio | hFE | 200 | - | IC = 10mA, VCE = 2V (Note 6) |
| Static Forward Current Transfer Ratio | hFE | 300 | - | IC = 200mA, VCE = 2V (Note 6) |
| Static Forward Current Transfer Ratio | hFE | 200 | - | IC = 2A, VCE = 2V (Note 6) |
| Static Forward Current Transfer Ratio | hFE | 100 | - | IC = 6A, VCE = 2V (Note 6) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 8 | mV | IC =0.1A, IB = 10mA (Note 6) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 90 | mV | IC = 1A, IB = 10mA (Note 6) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 150 | mV | IC =4.5A, IB = 125mA (Note 6) |
| Base-Emitter Turn-On Voltage | VBE(on) | 0.88 | V | IC = 4.5A, VCE = 2V (Note 6) |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.98 | V | IC = 4.5A, IB = 125mA (Note 6) |
| Output Capacitance | Cobo | 23 | pF | VCB = 10V. f = 1MHz |
| Transition Frequency | fT | 100 | MHz | VCE = 10V, IC = 50mA, f = 100MHz |
| Turn-On Time | ton | 170 | ns | VCC = 10V, IC = 3A IB1 = IB2 = 10mA |
| Turn-Off Time | toff | 400 | ns | VCC = 10V, IC = 3A IB1 = IB2 = 10mA |
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