NPN Medium Power Transistor Diodes FZT853TA 100V Collector Current 6A Low RCE SAT and RoHS Compliant
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Product Description
Product Overview
The FZT853 is a 100V NPN medium power transistor designed for high performance and reliability. It features a high continuous collector current of 6A, a peak pulse current of 10A, and low saturation voltage. With a low equivalent on-resistance (RCE(SAT) = 50m) and specified hFE up to 10A, it offers high gain hold-up. This device is AEC-Q101 qualified and is a "Green" device, free from Halogen and Antimony. It is available in a SOT223 package.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: NPN Medium Power Transistor
- Package: SOT223
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Environmental: Lead-Free, Halogen and Antimony Free ("Green" Device)
- Complementary Part: FZT953
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 200 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | VCEO | 100 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | VEBO | 7 | V | IE = 100A |
| Continuous Collector Current | IC | 6 | A | |
| Peak Pulse Current | ICM | 10 | A | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 150 | mV | IC = 2A, IB = 100mA |
| Equivalent On-Resistance | RCE(SAT) | 50 | m | |
| DC Current Gain | hFE | 100-200 | IC = 10mA, VCE = 2V | |
| DC Current Gain | hFE | 100-200 | IC = 2A, VCE = 2V | |
| DC Current Gain | hFE | 50-100 | IC = 4A, VCE = 2V | |
| DC Current Gain | hFE | 20-30 | IC = 10A, VCE = 2V | |
| Power Dissipation | PD | 3.0 | W | @TA = +25C (mounted on 52mm x 52mm 2oz copper) |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | @TA = +25C (mounted on 52mm x 52mm 2oz copper) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
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