DIODES RTT410 surface mount bridge rectifier rated at 1000V PRV for AC to DC full wave rectification
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The RTT410 is a 4A surface mount fast glass-passivated bridge rectifier designed for AC to DC full wave rectification. It is suitable for various applications including SMPS, LED lighting, adapter, battery charger, home appliances, office equipment, and telecommunication systems. Key features include a glass-passivated die construction, EMI design-friendly filter rectifier, compact and thin profile, low forward voltage drop for improved efficiency, high current and surge capability, and robust construction. This device is rated at 1000V PRV and is lead-free, RoHS compliant, halogen and antimony free ("Green" device).
Product Attributes
- Brand: Diodes Incorporated
- Product Type Marking Code: RTT410
- Manufacturer's Code Marking: Green
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish)
- Polarity: As Marked on Body
- Certifications: RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. "Green" Device (Note 3)
- Automotive Applications: For automotive applications requiring specific change control (e.g., AEC-Q100/101/200, PPAP capable, IATF 16949 certified facilities), please contact Diodes representative.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | |
| Working Peak Reverse Voltage | VRWM | 1000 | V | |
| DC Blocking Voltage | VR | 1000 | V | |
| Average Rectified Output Current | IO | 4 | A | @ Tc = +100C |
| Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load | IFSM | 100 | A | |
| I2t Rating for Fusing (1ms < t < 8.3ms) | I2t | 41.5 | A2s | |
| Typical Thermal Resistance, Junction to Lead (Per Element) | RJL | 8 | C/W | (Note 5) |
| Typical Thermal Resistance, Junction to Case (Per Element) | RJC | 5 | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Reverse Breakdown Voltage (Per Element) | V(BR)R | 1000 | V | Min, IR = 5A (Note 6) |
| Forward Voltage (Per Element) | VF | 1.1 / 1.3 | V | Typ, IF = 4A, TA = +25C / +125C (Note 7) |
| Leakage Current (Per Element) | IR | 5 / 200 | A | Typ, VR = 1000V, TA = +25C / +125C (Note 6) |
| Total Capacitance (Per Element) | CT | 42 | pF | Typ, VR = 4V, f = 1.0MHz |
| Reverse Recovery Time | tRR | 250 | ns | Typ, IF = 0.5A, IRR = 0.25A, IR = 1.0A |
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Sellina