NPN Silicon Planar Medium Power Darlington Transistors DIODES ZTX605 with Performance in Electronics

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Product Description

Product Overview

NPN Silicon Planar Medium Power Darlington Transistors designed for general purpose amplification and switching applications. These transistors offer high voltage capabilities, significant current handling, and excellent gain characteristics, making them suitable for a range of electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	ZTX604 Min.	ZTX604 Max.	ZTX605 Min.	ZTX605 Max.	Unit	Conditions
Collector-Base Breakdown Voltage	V(BR)CBO	120		140		V	IC=100A
Collector-Emitter Breakdown Voltage	V(BR)CEO	100		120		V	IC=10mA*
Emitter-Base Breakdown Voltage	V(BR)EBO		10		10	V	IE=100A
Collector Cut-Off Current	ICBO	0.01		0.01		A	VCB=100V
Collector Cut-Off Current	ICBO		10		10	A	VCB=120V
Collector Cut-Off Current	ICBO	0.01		0.01		A	VCB=100V,Tamb=100C
Collector Cut-Off Current	ICBO		10		10	A	VCB=120V,Tamb=100C
Emitter Cut-Off Current	IEBO		0.1		0.1	A	VEB=8V
Collector-Emitter Cut-Off Current	ICES		10		10	A	VCES=100V
Collector-Emitter Cut-Off Current	ICES				10	A	VCES=120V
Collector-Emitter Saturation Voltage	VCE(sat)	1.0	1.5	1.0	1.5	V	IC=250mA, IB=0.25mA*
Collector-Emitter Saturation Voltage	VCE(sat)					V	IC=1A, IB=1mA*
Base-Emitter Saturation Voltage	VBE(sat)		1.8		1.8	V	IC=1A, IB=1mA*
Base-Emitter Turn-On Voltage	VBE(on)		1.7		1.7	V	IC=1A, VCE=5V*
Static Forward Current Transfer Ratio	hFE	2K	5K	2K	0.5K		IC=50mA, VCE=5V
Static Forward Current Transfer Ratio	hFE		100K		100K		IC=500mA, VCE=5V*
Static Forward Current Transfer Ratio	hFE			2K			IC=1A, VCE=5V*
Static Forward Current Transfer Ratio	hFE			0.5K			IC=2A, VCE=5V*
Transition Frequency	fT	150		150		MHz	IC=100mA, VCE=10V, f=20MHz
Input Capacitance	Cibo	90		90		pF	VEB=500mV, f=1MHz
Output Capacitance	Cobo	15		15		pF	VCB=10V, f=1MHz
Switching Times	ton	0.5		0.5		s	IC=500mA, VCE=10V, IB1=IB2=0.5mA
Switching Times	toff	1.6		1.6		s
Power Dissipation	Ptot	1		1		W	at Tamb=25C
Power Dissipation Derating		5.7		5.7		mW/C	derate above 25C
Operating and Storage Temperature Range	Tj:Tstg	-55	+200	-55	+200	C
Collector-Base Voltage	VCBO	120		140		V
Collector-Emitter Voltage	VCEO	100		120		V
Emitter-Base Voltage	VEBO		10		10	V
Peak Pulse Current	ICM		4		4	A
Continuous Collector Current	IC		1		1	A