DIODES DCX124EU 7 F Complementary Pre Biased Transistor in Compact SOT363 Package for Circuit Design

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Price: Negotiable

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Product Description

Product Overview

The DCX (XXXX) U series are complementary pre-biased transistors housed in a compact SOT363 surface-mount package, ideal for automated assembly. These devices offer a supply voltage of 50V and a range of integrated bias resistors, simplifying circuit design. They are designed to be totally lead-free, fully RoHS compliant, and halogen/antimony-free, making them a "Green" device. The DCX (XXXX) UQs are AEC-Q101 qualified and suitable for automotive applications requiring strict change control.

Product Attributes

Brand: Diodes Incorporated
Package: SOT363
Package Material: Molded Plastic, "Green" Molding Compound
Certifications: AEC-Q101 (for UQ variants), PPAP capable, IATF 16949 certified facilities (for UQ variants)
Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

Part Number	R1 (NOM)	R2 (NOM)	Supply Voltage (VO)	Package	Marking	Reel Size (inches)	Packing Qty.
DCX124EU	22k	22k	50V	SOT363	C17	7, 13	3,000 / 10,000
DCX144EU	47k	47k	50V	SOT363	C20	7	3,000
DCX114YU	10k	47k	50V	SOT363	C14	7, 13	3,000 / 10,000
DCX123JU	2.2k	47k	50V	SOT363	C06	7	3,000
DCX114EU	10k	10k	50V	SOT363	C13	7, 13	3,000 / 10,000
DCX143EU	4.7k	4.7k	50V	SOT363	C08	7	3,000
DCX143ZU	4.7k	47k	50V	SOT363	C02	7	3,000
DCX115EU	100k	100k	50V	SOT363	C01	7	3,000
DCX143TU	4.7k	R1 Only	50V	SOT363	C07	7	3,000
DCX114TU	10k	R1 Only	50V	SOT363	C12	7	3,000

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
NPN Section
Collector-Base Breakdown Voltage	BVCBO	50			V	IC = 50A
Collector-Emitter Breakdown Voltage	BVCEO	50			V	IC = 1mA
Emitter-Base Breakdown Voltage	BVEBO	5			V	IE = 50A
Collector Cutoff Current	ICBO			0.5	A	VCB = 50V
Emitter Cutoff Current	IEBO			0.5	A	VEB = 4V
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IC/IB = 2.5mA / 0.25mA (DCX143TU) / IC/IB = 1mA / 0.1mA (DCX114TU)
DC Current Transfer Ratio	hFE	100	250	600		IC = 1mA, VCE = 5V
Input Resistor (R1) Tolerance	R1	-30		+30	%
Gain-Bandwidth Product	fT		250		MHz	VCE = 10V, IE = 5mA, f = 100MHz
PNP Section
Collector-Base Breakdown Voltage	BVCBO	-50			V	IC = -50A
Collector-Emitter Breakdown Voltage	BVCEO	-50			V	IC = -1mA
Emitter-Base Breakdown Voltage	BVEBO	-5			V	IE = -50A
Collector Cutoff Current	ICBO			-0.5	A	VCB = -50V
Emitter Cutoff Current	IEBO			-0.5	A	VEB = -4V
Collector-Emitter Saturation Voltage	VCE(sat)			-0.3	V	IC/IB = 2.5mA / 0.25mA (DCX143TU) / IC/IB = 1mA / 0.1mA (DCX114TU)
DC Current Transfer Ratio	hFE	100	250	600		IC = -1mA, VCE = -5V
Input Resistor (R1) Tolerance	R1	-30		+30	%
Gain-Bandwidth Product	fT		250		MHz	VCE = -10V, IE = -5mA, f = 100MHz
Thermal Characteristics
Power Dissipation	PD			200	mW	(Note 6, 7)
Thermal Resistance, Junction to Ambient Air	RJA			625	C/W	(Note 6)
Operating and Storage Temperature Range	TJ, TSTG	-55		+150	C