Medium Power PNP Silicon Planar Darlington Transistors DIODES ZTX705 Featuring 120 Volt VCEO and High Gain 3K
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Product Description
Product Description
PNP Silicon Planar Medium Power Darlington Transistors designed for applications such as lamp, solenoid, and relay drivers. These transistors offer a 120 Volt VCEO rating, 1 Amp continuous current capability, and a high gain of 3K at IC=1 Amp, with a power dissipation of 1 Watt.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | ZTX704 (Min) | ZTX704 (Max) | ZTX704 (Unit) | ZTX705 (Min) | ZTX705 (Max) | ZTX705 (Unit) | Conditions |
| Collector-Base Voltage | VCBO | -120 | V | -140 | V | |||
| Collector-Emitter Voltage | VCEO | -100 | V | -120 | V | |||
| Emitter-Base Voltage | VEBO | -10 | V | -10 | V | |||
| Peak Pulse Current | ICM | -4 | A | -4 | A | |||
| Continuous Collector Current | IC | -1 | A | -1 | A | |||
| Power Dissipation | Ptot | 1 | W | 1 | W | at Tamb = 25C | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | +200 | C | -55 | +200 | C | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -120 | V | -140 | V | IC=-100A | ||
| Collector-Emitter Breakdown Voltage | VCEO(SUS) | -100 | V | -120 | V | IC=-10mA* | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -10 | V | -10 | V | IE=-100A | ||
| Collector Cut-Off Current | ICBO | -0.1 | -10 | A | -0.1 | -10 | A | VCB=-100V, VCB=-120V, VCB=-100V, Tamb=100C, VCB=-120V, Tamb=100C |
| Collector Cut-Off Current | ICES | -10 | A | -10 | A | VCES=-80V | ||
| Emitter Cut-Off Current | IEBO | -0.1 | A | -0.1 | A | VEB=-8V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.3 | -2.5 | V | -1.3 | -2.5 | V | IC=-1A, IB=-1mA*; IC=-2A, IB=-2mA* |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.8 | V | -1.8 | V | IC=-1A, IB=-10mA* | ||
| Base-Emitter Turn-On Voltage | VBE(on) | -1.7 | V | -1.7 | V | IC=-1A, VCE=-5V* | ||
| Static Forward Current Transfer Ratio | hFE | 3K | 30K | 3K | 2K | IC=-10mA, VCE=-5V*; IC=-100mA, VCE=-5V*; IC=-1A, VCE=-5V*; IC=-2A, VCE=-5V* | ||
| Transition Frequency | fT | 160 | Typical | MHz | 160 | Typical | MHz | IC=-100mA, VCE=-10V, f=20MHz |
| Input Capacitance | Cibo | 90 | Typical | pF | 90 | Typical | pF | VEB=-0.5V, f=1MHz |
| Output Capacitance | Cobo | 15 | Typical | pF | 15 | Typical | pF | VCE=-10V, f=1MHz |
| Switching Times | ton | 0.6 | Typical | s | 0.6 | Typical | s | IC=-0.5A, VCE=-10V, IB1=IB2=-0.5mA |
| Switching Times | toff | 0.8 | Typical | s | 0.8 | Typical | s | IC=-0.5A, VCE=-10V, IB1=IB2=-0.5mA |
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