power transistor DIODES FMMT591ATA 40V PNP type in SOT23 package for power MOSFET gate drive circuits
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Product Description
Product Overview
The FMMT591A is a 40V PNP medium power, high-performance transistor in a SOT23 package. It offers a high continuous collector current of -1A and a peak pulse current of -2A, with a low saturation voltage of less than -500mV at -1A and an equivalent on-resistance of 350m. This device is complementary to the FMMT491A NPN type and is designed for applications such as Power MOSFET gate driving and low loss power switching. It is AEC-Q101 qualified for high reliability and is available in a "Green" device, totally lead-free, and fully RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -30V |
| Collector-Emitter Cutoff Current | ICES | -100 | nA | VCES = -30V |
| Emitter Cutoff Current | IEBO | -100 | nA | VEB = -5.6V |
| Collector-Emitter Saturation Voltage | VCE(sat) | < -500 | mV | IC = -1A, IB = -100mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.1 | V | IC = -1A, IB = -100mA |
| Base-Emitter Turn-On Voltage | VBE(on) | -1.0 | V | IC = -1A, VCE = -5V |
| Static Forward Current Transfer Ratio | hFE | 300 | IC = -1mA, VCE = -5V | |
| Static Forward Current Transfer Ratio | hFE | 250 | IC = -100mA, VCE = -5V | |
| Static Forward Current Transfer Ratio | hFE | 160 | IC = -500mA, VCE = -5V | |
| Static Forward Current Transfer Ratio | hFE | 80 | IC = -1A, VCE = -5V | |
| Transition Frequency | fT | 150 | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Output Capacitance | Cobo | 10 | pF | VCB = -10V, f = 1MHz |
| Delay Time | t(d) | 34.9 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA |
| Rise Time | t(r) | 19.2 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA |
| Storage Time | t(s) | 249 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA |
| Fall Time | t(f) | 62 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA |
| Power Dissipation | PD | 500 | mW | @TA = +25C (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 250 | C/W | @TA = +25C (Note 6) |
| Thermal Resistance, Junction to Lead | RJL | 197 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
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