Surface mount glass passivated bridge rectifier DIODES HDS10M-13 designed for full wave rectification
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The HDS10M is an advanced information 1A surface mount glass-passivated bridge rectifier. It is suitable for AC to DC full wave rectification in various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include a miniature package for space saving, low leakage current, suitability for SMT manufacturing, and a low forward voltage drop. This device is lead-free, RoHS compliant, and halogen and antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Bridge Rectifier
- Construction: Glass Passivated Die
- Package: Miniature, Surface Mount (HDS)
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish), Solderable per MIL-STD-202, Method 208
- Compliance: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 1000 | V | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Average Rectified Output Current | IO | 1.0 | A | @ TC = +95C (Note 5) |
| Non-Repetitive Peak Forward Surge Current (8.3ms) | IFSM | 30 | A | Single Half Sine-Wave Superimposed on Rated Load |
| Non-Repetitive Peak Forward Surge Current (1ms) | IFSM | 60 | A | Single Half Sine-Wave Superimposed on Rated Load |
| It Rating for Fusing (1ms < t < 8.3ms) | It | 2.39 | AS | |
| Typical Thermal Resistance, Junction to Ambient (Per Element) | RJA | 40 | C/W | (Note 6) |
| Typical Thermal Resistance, Junction to Case (Per Element) | RJC | 30 | C/W | |
| Typical Thermal Resistance, Junction to Lead (Per Element) | RJL | 18 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Reverse Breakdown Voltage (Per Element) | V(BR)R | 1,000 | V | IR = 5A (Note 7) |
| Forward Voltage (Per Element) | VF | 0.92 / 0.95 | V | IF = 0.5A, TA = +25C |
| Leakage Current (Per Element) | IR | 0.08 / 5 / 100 | A | VR = 1,000V, TA = +25C / VR = 1,000V, TA = +125C (Note 7) |
| Total Capacitance (Per Element) | CT | 8.2 | pF | VR = 4V, f = 1.0MHz |
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