Discrete Dual NPN Transistor DIODES DDC144TU-7 with Current Limiting and Base Resistor Integration

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Product Description

Product Overview

The DDC144TU is a dual NPN transistor designed for logic switching applications, suitable for use with micro-controllers and comparators. It features integrated 47k Ohm base resistors, enabling control with higher supply voltages and providing built-in current limiting. These discrete NPN transistors can be utilized as part of a larger circuit or as standalone components, supporting a maximum continuous current of 100 mA.

Product Attributes

Brand: Diodes Incorporated
Certifications: Lead Free By Design/RoHS Compliant, "Green" Device
Material: Molded Plastic, "Green Molding" Compound

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Total Device Ratings
Power Dissipation	Pd	200	mW	@TA = 25C
Power Deration above 25C	Pder	1.6	mW / C
Output Current	Iout	100	mA
Junction Operation and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Thermal Resistance, junction to ambient	RJA	625	C/W	@ TA = 25C (Ref: equivalent to only one heated junction)
Sub-Component Device: Discrete NPN Transistor (Q1, Q2) Ratings
Collector-Base Voltage	VCBO	50	V	@TA = 25C
Collector-Emitter Voltage	VCEO	50	V	@TA = 25C
Emitter-Base Voltage	VEBO	6	V	@TA = 25C
Collector Current (dc)	IC(max)	50	mA	@TA = 25C
Electrical Characteristics
Collector-Base Cut Off Current	ICBO	100	nA	VCB = 50V, IE = 0
Collector-Emitter Cut Off Current	ICEO	500	nA	VCE = 50V, IB = 0
Emitter-Base Cut Off Current	IEBO	500	nA	VEB = 5V, IC = 0
Collector-Base Breakdown Voltage	V(BR)CBO	50	V	IC = 50uA, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	50	V	IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IE = 50uA, IC = 0
DC Current Gain	hFE	150-400		VCE = 5V, IC = 1 mA
DC Current Gain	hFE	150-400		VCE = 5V, IC = 10 mA
DC Current Gain	hFE	150-350		VCE = 5V, IC = 25 mA
DC Current Gain	hFE	150-300		VCE = 5V, IC = 50 mA
DC Current Gain	hFE	50-110		VCE = 5V, IC = 100 mA
Collector-Emitter Saturation Voltage	VCE(SAT)	0.2-0.3	V	IC = 50mA, IB= 5mA
Output Voltage (equivalent to VCE(SAT) or VO(on))	VOL	0.2-0.25	Vdc	VCC = 5V, VB = 2.5V, RL=10K
Input Voltage	VI(ON)	0.95	Vdc	VO= 0.3V, IC= 2mA
Input Current	Ii	19.2-28	mA	VI = 5V
Base-Emitter Turn-on Voltage	VBE(ON)	1.2	V	VCE = 5V, IC = 2mA
Base-Emitter Saturation Voltage	VBE(SAT)	1.6	V	IC = 200uA, IB = 20uA
Input Resistor (Base)	R1	47	K	+/- 30%
Transition Frequency (gain-bandwidth product)	fT	250	MHz	VCE = 10V, IE = 5mA, f =100MHz
Collector Capacitance (Output Capacitance)	CC	5	pF	VCB = 10V, IE = 0, f = 1MHz