NPN Small Signal Transistor DDTC114GCA 7 F Featuring R2 Only Built In Biasing Resistor and Lead Free
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Product Description
NPN Pre-Biased Small Signal Transistor - DDTC (R2-ONLY SERIES)
The DDTC (R2-ONLY SERIES) CA is an NPN pre-biased small signal transistor featuring epitaxial planar die construction and built-in biasing resistor (R2 only). It offers complementary PNP types (DDTA) and is a RoHS compliant "Green" device, free from lead, halogen, and antimony. This surface mount transistor is ideal for various electronic applications requiring a compact and integrated biasing solution.
Product Attributes
- Brand: Diodes Incorporated
- Series: DDTC (R2-ONLY SERIES) CA
- Construction: Epitaxial Planar Die
- Biasing: Built-In Biasing Resistor, R2 only
- Compliance: Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device
- Packaging: SOT-23 Surface Mount
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Lead Finish: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe)
Technical Specifications
| Part Number | R2 (NOM) | Marking | VCBO (Max) | VCEO (Max) | IC (Max) | PD (Max) | RJA | TJ, TSTG |
|---|---|---|---|---|---|---|---|---|
| DDTC114GCA | 10K | N26 | 50 V | 50 V | 100 mA | 200 mW | 625 C/W | -55 to +150 C |
| DDTC124GCA | 22K | N27 | 50 V | 50 V | 100 mA | 200 mW | 625 C/W | -55 to +150 C |
| DDTC144GCA | 47K | N28 | 50 V | 50 V | 100 mA | 200 mW | 625 C/W | -55 to +150 C |
| DDTC115GCA | 100K | N29 | 50 V | 50 V | 100 mA | 200 mW | 625 C/W | -55 to +150 C |
Electrical Characteristics (TA = 25C unless otherwise specified)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 50 | - | - | V | IC = 50A |
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | - | - | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 5 | - | - | V | Various IE (see datasheet) |
| Collector Cutoff Current | ICBO | - | - | 0.5 | A | VCB = 50V |
| Emitter Cutoff Current | IEBO | 30 (DDTC115GCA) | - | 580 (DDTC114GCA) | A | VEB = 4V |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.3 | V | IC = 10mA, IB = 0.5mA |
| DC Current Transfer Ratio | hFE | 30 (DDTC114GCA) | - | 82 (DDTC115GCA) | - | IC = 5mA, VCE = 5V |
| Bleeder Resistor (R2) Tolerance | R2 | -30 | - | +30 | % | - |
| Gain-Bandwidth Product* | fT | - | 250 | - | MHz | VCE = 10V, IE = -5mA, f = 100MHz |
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