Plastic Encapsulated PNP Transistor Doeshare BC807-25 SOT-23 Package for Circuit Applications

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Product Description

Product Overview

The BC807 is a PNP Plastic-Encapsulated Transistor designed for general-purpose applications. It offers high stability and reliability, making it suitable for various electronic circuits. This transistor is complementary to the BC817 and comes in a compact SOT-23 small outline plastic package, allowing for flexible mounting positions.

Product Attributes

Brand: DOESHARE
Package Type: SOT-23 Plastic-Encapsulate Transistors
Transistor Type: PNP
Material: Plastic-Encapsulate
Certifications: Epoxy UL: 94V-0
Mounting Position: Any
Device Marking Code: BC807

Technical Specifications

Parameter	Symbol	Test Condition	Value	Unit
Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)
Collector-Base Voltage	VCBO		-50	V
Collector-Emitter Voltage	VCEO		-45	V
Emitter-Base Voltage	VEBO		-5	V
Collector Current-Continuous	IC		-500	mA
Collector Power Dissipation	PC		300	mW
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55 to +150
Thermal resistance From junction to ambient	RJA		417	/W
Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)
Collector-base breakdown voltage	V(BR)CBO	IC=-10uA, IE=0	-50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA, IB=0	-45	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-1uA, IC=0	-5	V
Collector cut-off current	ICBO	VCB=-45V, IE=0	-100	nA
Emitter cut-off current	IEBO	VEB=-4V, IC=0	-100	nA
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	100 to 600
DC current gain	hFE(2)	VCE=-1V, IC=-500mA	200 (Min)
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA	-0.70	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB=-50mA	-1.20	V
Transition frequency	fT	VCE=-5V, IC=-10mA,f=100MHz	100	MHz