High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current
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Product Description
Product Overview
The T4M35T600B(LS) is a Triac, a silicon bidirectional thyristor designed for high-power switching applications. It offers a blocking voltage of up to 600V and an on-state current rating of 4.0 Amperes RMS at +100C. Key features include high immunity to dv/dt, high surge current capability, and operational in three quadrants (Q1, Q2, and Q3). This device minimizes the need for snubber networks, simplifying circuit design. It is RoHS compliant and a "Green" device, indicating it is Halogen and Antimony free.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Triacs / Silicon Bidirectional Thyristors
- Material: Molded Plastic, "Green" Molding Compound
- Color: "Green" Device
- Certifications: RoHS Compliant, Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak repetitive off-state voltage | VDRM / VRRM | 600 | Volts | TJ = -40 to +125C, sine wave, 50 to 60Hz; gate open |
| On-stage RMS current | IT(RMS) | 4.0 | Amperes | full sine wave 50 to 60Hz, TC = +100C |
| Peak non-repetitive surge current | ITSM | 40 | Amps | one full cycle 60Hz, TJ = +25C |
| Circuit fusing consideration | I2t | 6.6 | A2s | t = 8.3ms |
| Operating junction temperature range | TJ | -40 to +125 | C | |
| Storage temperature range | TSTG | -40 to +150 | C | |
| Peak repetitive forward or reverse blocking current | IDRM / IRRM | 0.01 / 2.0 | mA | VAK = rated VDRM and VRRM, gate open; TJ = +25C / +125C |
| Peak forward on-state voltage | VTM | 1.6 | Volts | ITM = 4A @ tP 2.0ms, duty cycle 2% |
| Gate trigger current | IGT1 / IGT2 / IGT3 | 35 | mA | VD = 12V, RL = 100 |
| Gate trigger voltage | VGT1 / VGT2 / VGT3 | 1.3 | Volts | VD = 12V, RL = 100 |
| Holding current | IH | 35 | mA | VD = 12V, initiation current = 200mA, gate open |
| Latching current | IL1 / IL2 / IL3 | 60 / 80 / 60 | mA | VD = 12V, IG = 35mA |
| Critical rate of rise of Commutation voltage | dv/dt | 500 | V/s | VD = 67% rated VDRM, exponential waveform, gate open; TJ = +125C |
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