Transistor EIC MMBT2222AE NPN Silicon Epitaxial Planar Suitable for Switching and Amplifier Circuits

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Product Description

Product Overview

The MMBT2222E / MMBT2222AE are NPN Silicon Epitaxial Planar Transistors designed for switching and amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

Brand: EIC SEMI
Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478

Technical Specifications

Parameter	Symbol	MMBT2222E	MMBT2222AE	Unit
Absolute Maximum Ratings
Collector Base Voltage	VCBO	60	75	V
Collector Emitter Voltage	VCEO	30	40	V
Emitter Base Voltage	VEBO	5	6	V
Collector Current	IC	600		mA
Power Dissipation	Ptot	150		mW
Junction Temperature	Tj	150		OC
Storage Temperature Range	Tstg	- 55 to + 150		OC
Characteristics
DC Current Gain at VCE = 10 V, IC = 0.1 mA	hFE	35	-
DC Current Gain at VCE = 10 V, IC = 1 mA	hFE	50	-
DC Current Gain at VCE = 10 V, IC = 10 mA	hFE	75	-
DC Current Gain at VCE = 1 V, IC = 150 mA	hFE	50	30
DC Current Gain at VCE = 10 V, IC = 150 mA	hFE	100	-
DC Current Gain at VCE = 10 V, IC = 500 mA	hFE	30	-
Collector Base Cutoff Current at VCB = 50 V	ICBO	-	100	nA
Collector Base Cutoff Current at VCB = 60 V	ICBO	-	100	nA
Emitter Base Cutoff Current at VEB = 3 V	IEBO	-	100	nA
Collector Base Breakdown Voltage at IC = 10 A	V(BR)CBO	60	75	V
Collector Emitter Breakdown Voltage at IC = 10 mA	V(BR)CEO	30	40	V
Emitter Base Breakdown Voltage at IE = 10 A	V(BR)EBO	5	6	V
Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA	VCE(sat)	-	0.4	V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VCE(sat)	0.3	-	V
Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA	VBE(sat)	-	0.6	V
Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VBE(sat)	1.3	1.2	V
Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz	fT	300	-	MHz
Collector Output Capacitance at VCB = 10 V, f = 100 KHz	Cob	-	8	pF
Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	td	-	10	ns
Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	tr	-	25	ns
Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	tstg	-	225	ns
Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	tf	-	60	ns