High Voltage NPN Silicon Epitaxial Planar Transistor EIC MMBT6517 for Switching and Amplifier Circuits

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

Product Attributes

Brand: EIC
Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478
Package: TO-236 Plastic Package

Technical Specifications

Parameter	Symbol	Value	Unit	Min.	Max.
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage	VCBO	350	V
Collector Emitter Voltage	VCEO	350	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	- 55 to + 150	OC
Characteristics at Ta = 25 OC
DC Current Gain at VCE = 10 V, IC = 1 mA	hFE			20
DC Current Gain at VCE = 10 V, IC = 10 mA	hFE			30	200
DC Current Gain at VCE = 10 V, IC = 30 mA	hFE			30	200
DC Current Gain at VCE = 10 V, IC = 50 mA	hFE			20
DC Current Gain at VCE = 10 V, IC = 100 mA	hFE			15
Collector Base Cutoff Current at VCB = 250 V	ICBO		nA		- 50
Emitter Base Cutoff Current at VEB = 5 V	IEBO		nA		- 50
Collector Base Breakdown Voltage at IC = 100 A	V(BR)CBO	350	V		-
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	350	V		-
Emitter Base Breakdown Voltage at IE = 10 A	V(BR)EBO	6	V		-
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA	VCE(sat)		V		0.3
Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA	VCE(sat)		V		0.35
Collector Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA	VCE(sat)		V		0.5
Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA	VCE(sat)		V		1
Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA	VBE(sat)		V		0.75
Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA	VBE(sat)		V		0.85
Base Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA	VBE(sat)		V		0.9
Base Emitter On Voltage at VCE = 10 V, IC = 100 mA	VBE(on)		V		2
Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 20 MHz	fT		MHz	40	200
Collector Output Capacitance at VCB = 20 V, f = 1 MHz	Cob		pF		6