High power switching triac DIODES T12M50F600B with 600 volt peak voltage and 12 amp RMS current rating
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Product Description
Product Overview
The T12M50F600B(LS) is a Triac, a silicon bidirectional thyristor designed for high-power switching applications. It features a blocking voltage of up to 600V and an RMS current rating of 12 Amperes. With all diffused and glass-passivated junctions, it offers enhanced parameter uniformity and stability. The device is gate-triggerable in four modes and is RoHS compliant, being lead-free, halogen-free, and antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: TO-220AB
- Material: Molded Plastic, "Green" Molding Compound
- Color: "Green" (Molding Compound)
- Certifications: RoHS Compliant, Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak repetitive off-state voltage | VDRM, VRRM | 600 | Volts | TJ = -40 to +125C, sine wave, 50 to 60Hz; gate open |
| On-stage RMS current | IT(RMS) | 12 | Amps | Full sine wave 50 to 60Hz, TC = +85C |
| Peak Non-Repetitive Surge Current | ITSM | 100 | Amps | One Full Cycle Sine Wave, 60 Hz, TJ= +25C |
| Circuit fusing consideration | I2t | 40 | A2s | t = 8.3ms |
| Operating junction temperature range | TJ | -40 to +125 | C | |
| Storage temperature range | TSTG | -40 to +150 | C | |
| Peak repetitive forward or reverse blocking current | IDRM, IRRM | 10 (TJ=+25C), 2 (TJ=+125C) | A, mA | VAK = rated VDRM and VRRM, gate open |
| Peak On-State Voltage | VTM | 1.75 | Volts | ITM= 12A Peak @Tp=1 to 2 ms, Duty Cycle 2% |
| Gate trigger current | IGT1, IGT2, IGT3, IGT4 | 50, 50, 50, 75 | mA | VD = 12V, RL = 100 |
| Gate trigger voltage | VGT1, VGT2, VGT3, VGT4 | 2, 2, 2, 2.5 | Volts | VD = 12V, RL = 100 |
| Holding current | IH | 50 | mA | VD = 12V, initiation current = 200mA, gate open |
| Critical Rate of Rise of Off-State Voltage | dv/dt | 100 | V/s | VD=Rated VDRM, Exponential Waveform, TJ=85C |
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