silicon thyristor DIODES SD1A150A with 120 volts peak repetitive off state voltage and compact SMA package
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Product Description
Product Overview
The SD1A150A(LS) is a high voltage silicon unidirectional thyristor designed for applications requiring reliable overvoltage protection. It features a breakover voltage (VBO) range of 142 to 157 Vdc and a repetitive off-state voltage (VDRM) of 120V. With a compact SMA package for space-saving designs and a low holding current (IH) under 60mA, this device is suitable for gas igniters and other high-voltage switching applications. It is also RoHS compliant and a "Green" device, free from Halogen and Antimony.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: SIDAC HIGH VOLTAGE SILICON UNIDIRECTIONAL THYRISTORS
- Package: SMA (DO-214AC)
- Material: Molded plastic
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| MAXIMUM RATINGS | ||||
| Peak repetitive off-state voltage | VDRM | 120 | Volts | TJ= -40 to +125C, Sine Wave, 50 to 60Hz |
| On-state RMS current | IT(RMS) | 1 | Amp | TL= 80C, all conduction angles |
| Peak non-repetitive surge current | ITSM | 280 | Amps | Ta=25C, pulse width to = 10us, f=5Hz sine wave, repetitive peak value |
| Maximum lead Solder Temperature | TL | 260 | C | Lead Length 1/16 from Case, 10s Max |
| Operating junction temperature range | TJ | -40 ~ +125 | C | |
| Storage temperature range | TSTG | -40 ~ +150 | C | |
| THERMAL CHARACTERISTICS | ||||
| Typical thermal resistance junction to case | RthJC | 15 | C/W | TYP. |
| OFF CHARACTERISTICS | ||||
| Peak repetitive forward or reverse blocking current | IDRM | 10 | uA | MAX, VDRM=120V (50 to 60Hz) |
| ON CHARACTERISTICS | ||||
| Peak On-State Voltage | VTM | 1.5 | Volts | MAX, IT = 1A |
| Breakover Voltage | VBO | 142 - 157 | Volts | MIN/MAX, IBO = 5uA |
| Break over current | IBO | 200 | uA | MAX |
| Holding current | IH | 60 | mA | MAX |
| Switching resistance | RS | 0.1 | k | MIN |
| DYNAMIC CHARACTERISTICS | ||||
| Critical rate of rise of on-state current | di/dt | 80 | A/s | TYP. |
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