Plastic encapsulated PNP transistor Doeshare S8550 in SOT23 package for general purpose electronics

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The S8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed as a complementary component to the S8050. It offers a power dissipation of 300mW, providing high stability and reliability. This general-purpose transistor is suitable for various electronic applications.

Product Attributes

Brand: DOESHARE
Package Type: SOT-23 Plastic-Encapsulate Transistors
Material: Epoxy UL: 94V-0
Mounting Position: Any
Marking: 2TY

Technical Specifications

Parameter	Symbol	Condition	Value	Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage	VCBO		-40	V
Collector-Emitter Voltage	VCEO		-25	V
Emitter-Base Voltage	VEBO		-5	V
Collector Current-Continuous	IC		-500	mA
Collector Power Dissipation	PC		300	mW
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55 to +150
Thermal resistance From junction to ambient	RJA		417	/W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	-40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	-25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100uA, IC=0	-5	V
Collector cut-off current	ICEO	VCE=20V, IB=0	-100	nA
Collector cut-off current	ICBO	VCB=40V, IE=0	-100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0	-100	nA
DC current gain	hFE(1)	VCE=1V, IC=50mA	120 to 400
DC current gain	hFE(2)	VCE=1V, IC=500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA	-0.60	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA	-1.20	V
Transition frequency	fT	VCE=6V, IC=20mA,f=30MHz	150	MHz
CLASSIFICATION OF hFE(1)
RANK	L		120-200
RANK	H		200-350
RANK	J		300-400