NPN Silicon Transistor DoesShare DTC143ZE Featuring Monolithic Bias Resistor Network for Circuit Layout
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Product Description
Product Overview
The DTC114EE to DTC123JE series are NPN Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These Bias Resistor Transistors (BRTs) are designed to replace single transistors with external bias resistors, simplifying circuit design, reducing board space, and lowering component count. They are ideal for low power surface mount applications and are RoHS Compliant with Green EMC and Matte Tin lead finish.
Product Attributes
- Brand: DOESHARE
- Technology: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
- Certifications: RoHS Compliant, Green EMC
- Lead Finish: Matte Tin (Sn)
- Package: SOT-523 (SC-75A)
Technical Specifications
| Model | Device Marking | R1 (K) | R2 (K) | Weight (approx.) |
|---|---|---|---|---|
| DTC114EE | 24 | 10 | 10 | 0.002g |
| DTC124EE | 25 | 22 | 22 | 0.002g |
| DTC144EE | 26 | 47 | 47 | 0.002g |
| DTC114YE | 64 | 10 | 47 | 0.002g |
| DTC114TE | 04 | 10 | 0.002g | |
| DTC143TE | 03 | 4.7 | 0.002g | |
| DTC123EE | 22 | 2.2 | 2.2 | 0.002g |
| DTC143EE | 23 | 4.7 | 4.7 | 0.002g |
| DTC143ZE | E23 | 4.7 | 47 | 0.002g |
| DTC124XE | 45 | 22 | 47 | 0.002g |
| DTC123JE | E42 | 2.2 | 47 | 0.002g |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Base Voltage (VCBO) | TA = 25C | - | - | 50 | V |
| Collector-Emitter Voltage (VCEO) | TA = 25C | - | - | 50 | V |
| Collector Current (IC) | TA = 25C | - | - | 100 | mA |
| Power Dissipation (PD) | TA = 25C | - | - | 150 | mW |
| Thermal Resistance (RJA) | Junction to Ambient | - | 600 | - | C/W |
| Junction & Storage Temperature Range (TJ, TSTG) | - | -55 | - | +150 | C |
| Electrical Characteristics (TA = 25C unless otherwise noted) | |||||
| Collector-Base Cutoff Current (ICBO) | VCB =50V, IE =0A | - | - | 100 | nA |
| Collector-Emitter Cutoff Current (ICEO) | VCE =50V, IB =0A | - | - | 500 | nA |
| Emitter-Base Cutoff Current (IEBO) | VEB =6.0V, IC =0A | - | - | 0.50 | mA |
| Collector-Base Breakdown Voltage (V(BR)CBO) | IC =10uA, IE =0A | 50 | - | - | Volts |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) (Note 1) | IC =2.0mAA, IB =0A | 50 | - | - | Volts |
| On Characteristics (Note 1) | |||||
| DC Current Gain (HFE) | VCE =10V, IC =5.0mA | 35 | - | 350 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=10mA, IB=0.3mA (various models) | - | - | 0.25 | Volts |
| Output Voltage (on) (VOL) | RL= 1.0K, VCC=5.0V, VB=2.5V (various models) | - | - | 0.20 | Volts |
| Output Voltage (on) (VOH) | RL= 1.0K, VCC=5.0V, VB=0.5V (various models) | 4.9 | - | - | Volts |
| Resistor Values (TA = 25C unless otherwise noted) | |||||
| R1 Input Resistor | (Model specific) | 1.5 | - | 10 | K |
| R1/R2 Resistor Ratio | (Model specific) | 0.038 | - | 1.2 | - |
Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%.
Note 2: Package outline conforms to JEITA EAIJ ED-7500A SC-75A. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
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