Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general purpose electronic circuits

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Product Description

Product Overview

The SS8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for general-purpose applications. It offers a power dissipation of 300mW and is characterized by high stability and reliability. This transistor is complementary to the S8050. Its small outline plastic package makes it suitable for surface mounting.

Product Attributes

Brand: DOESHARE (implied by the document source)
Package Type: SOT-23 Plastic-Encapsulated Transistor
Material: Plastic
Certifications: Epoxy UL: 94V-0
Mounting Position: Any
Marking: Y2

Technical Specifications

Parameter	Symbol	Test Condition	Value	Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage	VCBO		-40	V
Collector-Emitter Voltage	VCEO		-25	V
Emitter-Base Voltage	VEBO		-5	V
Collector Current-Continuous	IC		-1500	mA
Collector Power Dissipation	PC		300	mW
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55-+150
Thermal resistance From junction to ambient	RJA		417	/W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage	V(BR)CBO	IC=-100uA, IE=0	-40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100uA, IC=0	-5	V
Collector cut-off current	ICEO	VCE=-20V, IB=0	-100	nA
Collector cut-off current	ICBO	VCB=-40V, IE=0	-100	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0	-100	nA
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	120 - 400
DC current gain	hFE(2)	VCE=-1V, IC=-800mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB=-80mA	-0.60	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB=-80mA	-1.20	V
Transition frequency	fT	VCE=-1V, IC=-10mA	100	MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz	20	pF