NPN Silicon General Purpose Transistor EIC MMBT4140 Suitable for Stable Electronic Circuit Operation

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

MMBT4140 NPN Silicon General Purpose Transistor

The MMBT4140 is an NPN silicon general-purpose transistor designed for a wide range of applications. It offers reliable performance in various electronic circuits.

Product Attributes

Brand: EIC Semiconductor
Package: SOT-23 Plastic
Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Collector Base Voltage	VCBO	40	V
Collector Emitter Voltage	VCEO	30	V
Emitter Base Voltage	VEBO	5	V
Collector Current (DC)	IC	1	A
Peak Collector Current	ICM	2	A
Peak Base Current	IBM	1	A
Total Power Dissipation	Ptot	200	mW	1) Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Total Power Dissipation	Ptot	450	mW	2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-65 to +150	OC
DC Current Gain (at VCE = 5 V, IC = 1 mA)	hFE	300	-	900
DC Current Gain (at VCE = 5 V, IC = 500 mA)	hFE	300	-	900
DC Current Gain (at VCE = 5 V, IC = 1 A)	hFE	200	-
Collector Base Cutoff Current (at VCB = 40 V)	ICBO	-	100	nA
Collector Emitter Cutoff Current (at VCE = 30 V)	ICEO	-	100	nA
Emitter Base Cutoff Current (at VEB = 5 V)	IEBO	-	100	nA
Collector Emitter Saturation Voltage (at IC = 100 mA, IB = 1 mA)	VCE(sat)	-	200	mV
Collector Emitter Saturation Voltage (at IC = 500 mA, IB = 50 mA)	VCE(sat)	-	250	mV
Collector Emitter Saturation Voltage (at IC = 1 A, IB = 100 mA)	VCE(sat)	-	500	mV
Base Emitter Saturation Voltage (at IC = 1 A, IB = 100 mA)	VBE(sat)	-	1.2	V
Base Emitter Turn-on Voltage (at VCE = 5 V, IC = 1 A)	VBE(on)	-	1.1	V
Transition Frequency (at VCE = 10 V, IC = 50 mA, f = 100 MHz)	fT	150	MHz
Collector Capacitance (at VCB = 10 V, f = 1 MHz)	Cob	-	10	pF