SOT23 Package NPN Silicon Transistor EIC MMBT3904 Designed for Switching and Amplifier Applications

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Product Description

MMBT3904 NPN Silicon General Purpose Transistor

The MMBT3904 is an NPN Silicon General Purpose Transistor designed for switching and amplifier applications. It comes in a SOT-23 Plastic Package.

Product Attributes

Brand: EIC Semiconductor (implied by www.eicsemi.com)
Package Type: SOT-23 Plastic Package
Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478

Technical Specifications

Parameter	Symbol	Value	Unit	Min.	Max.
Absolute Maximum Ratings
Collector Base Voltage	VCBO	60	V
Collector Emitter Voltage	VCEO	40	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	200	mA
Power Dissipation	Ptot	350	mW
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
Characteristics at Ta = 25 OC
DC Current Gain at VCE = 1 V, IC = 0.1 mA	hFE	40	-		300
DC Current Gain at VCE = 1 V, IC = 1 mA	hFE	70	-		-
DC Current Gain at VCE = 1 V, IC = 10 mA	hFE	100	-		-
DC Current Gain at VCE = 1 V, IC = 50 mA	hFE	60	-		-
DC Current Gain at VCE = 1 V, IC = 100 mA	hFE	30	-		-
Collector Base Cutoff Current at VCB = 30 V	ICBO	-	nA		50
Emitter Base Cutoff Current at VEB = 6 V	IEBO	-	nA		50
Collector Base Breakdown Voltage at IC = 10 A	V(BR)CBO	60	V		-
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	40	V		-
Emitter Base Breakdown Voltage at IE = 10 A	V(BR)EBO	6	V		-
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA	VCE(sat)	-	V		0.2
Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA	VCE(sat)	-	V		0.3
Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA	VBE(sat)	0.65	V		0.85
Base Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA	VBE(sat)	-	V		0.95
Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz	fT	300	MHz		-
Collector Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz	Cob	-	pF		4
Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA	td	-	ns		35
Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA	tr	-	ns		35
Storage Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA	ts	-	ns		200
Fall Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA	tf	-	ns		50