NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

Product Attributes

Brand: SGS (implied from datasheet markings)
Certifications: IATF 0060636

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector Base Voltage	VCBO	350	V
Collector Emitter Voltage	VCEO	350	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	200	mW	Ta = 25 OC
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
DC Current Gain	hFE	20	-	VCE = 10 V, IC = 1 mA
DC Current Gain	hFE	30	-	VCE = 10 V, IC = 10 mA
DC Current Gain	hFE	30	-	VCE = 10 V, IC = 30 mA
DC Current Gain	hFE	20	-	VCE = 10 V, IC = 50 mA
DC Current Gain	hFE	15	-	VCE = 10 V, IC = 100 mA
Collector Base Cutoff Current	ICBO	-50	nA	VCB = 250 V
Emitter Base Cutoff Current	IEBO	-50	nA	VEB = 5 V
Collector Base Breakdown Voltage	V(BR)CBO	350	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	350	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	0.3	V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.35	V	IC = 20 mA, IB = 2 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.5	V	IC = 30 mA, IB = 3 mA
Collector Emitter Saturation Voltage	VCE(sat)	1	V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	0.75	V	IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage	VBE(sat)	0.85	V	IC = 20 mA, IB = 2 mA
Base Emitter Saturation Voltage	VBE(sat)	0.9	V	IC = 30 mA, IB = 3 mA
Base Emitter On Voltage	VBE(on)	2	V	VCE = 10 V, IC = 100 mA
Gain Bandwidth Product	fT	40 to 200	MHz	VCE = 20 V, IC = 10 mA, f = 20 MHz
Collector Output Capacitance	Cob	6	pF	VCB = 20 V, f = 1 MHz