NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier

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Product Description

MPSA42 NPN Silicon Epitaxial Planar Transistor

The MPSA42 is an NPN silicon epitaxial planar transistor designed for high voltage switching and amplifier applications. It is recommended to use the complementary PNP transistors MPSA92 and MPSA93.

Product Attributes

Certifications: TH97/10561QM, TW00/17276EM

Technical Specifications

Parameter	Symbol	Value	Unit	Max.
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	VCBO	300	V
Collector Emitter Voltage	VCEO	300	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	625	mW
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	-55 to +150	°C
Characteristics at Ta = 25 °C
DC Current Gain at VCE = 10 V, IC = 1 mA	hFE	25	-
DC Current Gain at VCE = 10 V, IC = 10 mA	hFE	40	-
DC Current Gain at VCE = 10 V, IC = 30 mA	hFE	40	-
Collector Base Cutoff Current at VCB = 200 V	ICBO		µA	0.1
Collector Base Cutoff Current at VCB = 160 V	ICBO		µA	0.1
Emitter Base Cutoff Current at VEB = 6 V	IEBO		µA	0.1
Emitter Base Cutoff Current at VEB = 4 V	IEBO		µA	0.1
Collector Base Breakdown Voltage at IC = 100 µA	V(BR)CBO	300	V
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	300	V
Emitter Base Breakdown Voltage at IE = 100 µA	V(BR)EBO	6	V
Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA	VCE(sat)		V	0.5
Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA	VBE(sat)		V	0.9
Gain Bandwidth Product at IC = 10 mA ,VCE = 20 V, f = 100 MHz	fT	50	MHz
Collector Output Capacitance at VCB = 20 V, f = 1 MHz	Cob		pF	3