PNP transistor ElecSuper MMBT2907A designed for switching and amplification in electronic applications

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Product Description

Product Overview

The MMBT2907A is a PNP transistor from ElecSuper, designed for general-purpose applications. It offers complementary functionality to the MMBT2222A, featuring a power dissipation of 250mW and high stability and reliability. Packaged in a SOT-23 small outline plastic package, it is suitable for various electronic circuits requiring PNP amplification or switching.

Product Attributes

Brand: ElecSuper
Product Type: PNP Transistors
Package: SOT-23 Small Outline Plastic
Encapsulation: Plastic
Flammability Rating: Epoxy UL: 94V-0
Mounting Position: Any

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings & Thermal Characteristics
Collector-Base Voltage	VCBO	-60	V	Ratings at 25 ambient temperature unless otherwise specified.
Collector-Emitter Voltage	VCEO	-60	V	Ratings at 25 ambient temperature unless otherwise specified.
Emitter-Base Voltage	VEBO	-5	V	Ratings at 25 ambient temperature unless otherwise specified.
Collector Current-Continuous	IC	-600	mA	Ratings at 25 ambient temperature unless otherwise specified.
Collector Power Dissipation	PC	250	mW	Ratings at 25 ambient temperature unless otherwise specified.
Junction Temperature	Tj	150		Ratings at 25 ambient temperature unless otherwise specified.
Storage Temperature	TSTG	-55~150		Ratings at 25 ambient temperature unless otherwise specified.
Thermal Resistance Junction to Ambient	RJA	500	/W	Ratings at 25 ambient temperature unless otherwise specified.
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	-60	V	IC=-100uA, IE=0
Collector-emitter breakdown voltage	V(BR)CEO	-60	V	IC=-1mA, IB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-10uA, IC=0
Collector cut-off current	ICEX	-50	nA	VCE=-30V, VEB(off)=-0.5V
Collector cut-off current	ICBO	-20	nA	VCB=-50V, IE=0
Emitter cut-off current	IEBO	-10	nA	VEB=-3V, IC=0
DC current gain	hFE1	75		VCE=-10V, IC=-0.1mA
DC current gain	hFE2	100		VCE=-10V, IC=-1mA
DC current gain	hFE3	100		VCE=-10V, IC=-10mA
DC current gain	hFE4	100		VCE=-10V, IC=-150mA
DC current gain	hFE5	50	300	VCE=-10V, IC=-500mA
Collector-emitter saturation voltage	VCE(sat)	-0.40	V	IC=-150mA, IB=-15mA *Pulse test
Collector-emitter saturation voltage	VCE(sat)	-1.60	V	IC=-500mA, IB=-50mA *Pulse test
Base-emitter saturation voltage	VBE(sat)	-1.30	V	IC=-150mA, IB=-15mA *Pulse test
Base-emitter saturation voltage	VBE(sat)	-2.60	V	IC=-500mA, IB=-50mA *Pulse test
Transition frequency	fT	200	MHz	VCE=-20V, IC=-50mA, f=100MHz
Delay time	td	10	ns	VCE=-30V, IC=-150mA, IB1=-15mA
Rise time	tr	25	ns	VCE=-30V, IC=-150mA, IB1=-15mA
Storage time	ts	225	ns	VCE=-6V, IC=-150mA, IB1=IB2=-15mA
Fall time	tf	60	ns	VCE=-6V, IC=-150mA, IB1=IB2=-15mA
hFE Classification
Rank	hFE Range
L	100~200
H	200~300

Dimensions and Patterns (SOT-23)

Symbol	Dimensions (mm) Min.	Dimensions (mm) Max.	Symbol	Dimensions (mm) Min.	Dimensions (mm) Max.
A	0.900	1.150	E1	2.250	2.550
A1	0.900	1.050	e	0.950 (TYP)
b	0.300	0.500	e1	1.800	2.000
c	0.080	0.150	L	0.550 (REF)
D	2.800	3.000	L1	0.300	0.500
E	1.200	1.400		0	8
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.