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ElecSuper SI2347DS T1 GE3 ES P Channel MOSFET with halogen free material and UL 94V 0 certification

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SI2347DS-T1-GE3(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V, VGS=0V-1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=20V100nA
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-0.9-1.5-2.0V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-3A4660m
Drain-to-source On-resistanceRDS(on)VGS=-4.5V, ID=-3A6280m
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input CapacitanceCISSVGS=0V, VDS =-15V, f=1MHz550pF
Output CapacitanceCOSS75pF
Reverse Transfer CapacitanceCRSS63pF
Total Gate ChargeQG(TOT)VGS=-10V, VDS=-15V, ID =-4A6.5nC
Gate-to-Source ChargeQGS1.1nC
Gate-to-Drain ChargeQGD1.3nC
SWITCHING CHARACTERISTICS
Turn-On Delay Timetd(ON)VGS=-10V, VDS=-15V, RL=3.5, RG=314ns
Rise Timetr60ns
Turn-Off Delay Timetd(OFF)19ns
Fall Timetf11ns
BODY DIODE CHARACTERISTICS
Forward VoltageVSDVGS=0V, IS=-1.0A-0.7-1.5V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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