Power management P channel MOSFET FM 3415E featuring ultra low on resistance and 2000V ESD protection

Name: Power management P channel MOSFET FM 3415E featuring ultra low on resistance and 2000V ESD protection
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 3415E is a 9V P-channel MOSFET field-effect transistor from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features ultra-low on-resistance (RDS(ON)

Product Attributes

Brand: FINE MADE (Superchip)
Origin: China
Model Number: 3415E
Document Number: S&CIC1597
Version: 1.0

Technical Specifications

Parameter	Test Condition	Min	Typical	Max	Unit
BVDSS (Drain-Source Breakdown Voltage)	VGS=0V, IDS=-250A	-8.4	-9		V
IDSS (Drain Current)	VDS=-6V, VGS=0V, TA=85		-1	-10	A
VGS(th) (Gate Threshold Voltage)	VDS=VGS, IDS=-250A	-0.35	-0.5	-1.4	V
IGSS (Gate Leakage Current)	VGS=5V, VDS=0V			100	nA
RDS(ON) (On-Resistance)	VGS=-4.5V, IDS=-3.0A		55	60	m
	VGS=-2.5V, IDS=-2.0A		70	75	m
	VGS=-1.8V, IDS=-1.0A		110	120	m
VSD (Diode Forward Voltage)	ISD=-3.5A, VGS=0V		-1.3		V
RG (Gate Input Resistance)	VGS=0.VDS=0. Frequency=1MHZ		--	6

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
VDSS	Drain-Source Voltage	-9	V
VGSS	Gate-Source Voltage	6
ID	Drain Current	-3.5	A
IDM	Drain Pulse Current	-7
TJ	Maximum Junction Temperature	150
TSTG	Storage Temperature	-55 to 150
RJAb	Junction-to-Ambient Thermal Resistance	150	/W

Package Information

Symbol	mm		Inch
	Min	Max	Min	Max
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950 TYP.		0.037 TYP.
e1	1.800	2.000	0.071	0.079
L	0.550 REF.		0.022 REF.
L1	0.300	0.500	0.012	0.020
	0	8	0	8