High Frequency Surface Mount Rectifier FMS Formosa Microsemi SS36-B with Loss and UL 94V 0 Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The Formosa MS SS32-B THRU SS320-B is a series of Surface Mount Schottky Barrier Rectifiers designed for high-frequency applications. These rectifiers feature a metal silicon junction for majority carrier conduction, resulting in low power loss and high efficiency. They are ideal for surface mounting, offering built-in strain relief for automated placement and high forward surge current capability. The plastic package carries an Underwriters Laboratory Flammability Classification 94V-0, and they are compliant with RoHS Directive 2011/65/EU. An optional "-H" suffix indicates a Halogen-free part.
Product Attributes
- Brand: Formosa MS
- Certifications: Underwriters Laboratory Flammability Classification 94V-0, RoHS Directive 2011/65/EU
- Material: Metal silicon junction
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Symbol | SS32-B | SS34-B | SS345-B | SS35-B | SS36-B | SS38-B | SS310-B | SS315-B | SS320-B | UNIT | Conditions |
| VRRM | 20 | 40 | 45 | 50 | 60 | 80 | 100 | 150 | 200 | V | Repetitive peak reverse voltage |
| VRMS | 14 | 28 | 32 | 35 | 42 | 56 | 70 | 105 | 140 | V | RMS voltage |
| VR | 20 | 40 | 45 | 50 | 60 | 80 | 100 | 150 | 200 | V | Continuous reverse voltage |
| VF@IF=3.0A | 0.55 | 0.70 | 0.70 | 0.85 | 0.85 | 0.92 | 0.92 | 0.92 | 0.92 | V | Maximum forward voltage |
| IO | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | 3.0 | A | Forward rectified current |
| IFSM | 80 | 80 | 80 | 80 | 80 | 80 | 80 | 80 | 80 | A | Forward surge current (8.3ms single half sine-wave) |
| IR@VR=VRRM | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | mA | Reverse current (Tj=25C) |
| RJA | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | C/W | Thermal resistance (Junction to ambient, P.C.B. mounted with 0.2x0.2" copper pad areas) |
| CJ | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 | pF | Diode junction capacitance (f=1MHz and applied 4V DC reverse voltage) |
| TSTG | -65 to +150 | -65 to +150 | -65 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +125 | -55 to +125 | C | Storage temperature |
| TJ | -55 to +125 | -55 to +125 | -55 to +125 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +125 | -55 to +125 | C | Operating temperature |
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