Discrete IGBT Fuji Electric FGW75N65WE Suitable for Inverter Welding Machines and Power Conditioners
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Product Description
Product Overview
The FGW75N65WE is a high-speed Discrete IGBT from Fuji Electric's W series, designed for applications requiring low power loss and high reliability. It features low switching surge and noise, with excellent ruggedness (RBSOA, SCSOA). Ideal for Uninterruptible Power Supplies, PV Power Conditioners, and Inverter Welding Machines.
Product Attributes
- Brand: Fuji Electric
- Series: W Series
- Product Type: Discrete IGBT
- Date: January 2018
- Website: http://www.fujielectric.com/products/semiconductor/
Technical Specifications
| Item | Symbol | Conditions | min. | typ. | max. | Unit | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | 650 | V | ||||
| Gate-Emitter Voltage | VGES | ±20 | V | ||||
| Transient Gate-Emitter Voltage | Tp<1µs | ±30 | V | ||||
| DC Collector Current | IC@25°C | TC=25°C | 124 | A | |||
| DC Collector Current | IC@100°C | TC=100°C | 75 | A | |||
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE≤650V Tj≤175°C | 300 | A | ||||
| Diode Forward Current | IF@25°C | 111 | A | ||||
| Diode Forward Current | IF@100°C | 75 | A | ||||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |||
| IGBT Max. Power Dissipation | PD_IGBT | TC=25°C | 520 | W | |||
| FWD Max. Power Dissipation | PD_FWD | TC=25°C | 260 | W | |||
| Operating Junction Temperature | Tj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 650V, VGE = 0V Tj=25°C | 250 | µA | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 650V, VGE = 0V Tj=175°C | 2 | mA | |||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = ±20V | 200 | nA | |||
| Gate-Emitter Threshold Voltage | VGE (th) | VCE = 20V, IC = 75mA | 3.0 | 4.0 | 5.0 | V | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = 15V, IC = 75A Tj=25°C | 1.80 | 2.20 | V | ||
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = 15V, IC = 75A Tj=125°C | 2.05 | - | V | ||
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = 15V, IC = 75A Tj=175°C | 2.10 | - | V | ||
| Input Capacitance | Cies | VCE=25V VGE=0V f=1MHz | 5300 | - | pF | ||
| Output Capacitance | Coes | 150 | - | pF | |||
| Reverse Transfer Capacitance | Cres | 120 | - | pF | |||
| Gate Charge | QG | VCC = 520V IC = 75A VGE = 15V | 300 | - | nC | ||
| Turn-On Delay Time | td(on) | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 34 | - | ns | Energy loss include “tail” and FWD reverse recovery. | |
| Rise Time | tr | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 56 | - | ns | ||
| Turn-Off Delay Time | td(off) | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 300 | - | ns | ||
| Fall Time | tf | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 110 | - | ns | ||
| Turn-On Energy | Eon | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 0.95 | - | mJ | ||
| Turn-Off Energy | Eoff | Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 1.2 | - | mJ | ||
| Turn-On Delay Time | td(on) | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 34 | - | ns | Energy loss include “tail” and FWD reverse recovery. | |
| Rise Time | tr | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 56 | - | ns | ||
| Turn-Off Delay Time | td(off) | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 340 | - | ns | ||
| Fall Time | tf | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 94 | - | ns | ||
| Turn-On Energy | Eon | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 1.6 | - | mJ | ||
| Turn-Off Energy | Eoff | Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω | 1.2 | - | mJ | ||
| Forward Voltage Drop | VF | IF=75A Tj=25°C | 2.5 | 3.2 | V | ||
| Forward Voltage Drop | VF | IF=75A Tj=125°C | 1.9 | - | V | ||
| Forward Voltage Drop | VF | IF=75A Tj=175°C | 1.7 | - | V | ||
| Diode Reverse Recovery Time | trr | VCC=400V, IF=37.5A -diF/dt=300A, Tj=25°C | 180 | - | ns | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V, IF=37.5A -diF/dt=300A, Tj=25°C | 0.41 | - | µC | ||
| Diode Reverse Recovery Time | trr | VCC=400V, IF=37.5A -diF/dt=300A, Tj=150°C | 190 | - | ns | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V, IF=37.5A -diF/dt=300A, Tj=150°C | 1.50 | - | µC | ||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | 50 | °C/W | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | 0.286 | °C/W | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | 0.568 | °C/W | ||||
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