2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed Switching Applications

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Product Description

Product Overview

The 2MBI400VB-060-50 is a V series IGBT Power Module designed for high-speed switching applications. It features a 2-in-1 package, voltage drive capability, and a low inductance module structure, making it suitable for AC-switch applications in UPS and PCS systems.

Product Attributes

Brand: Fuji Electric
Weight: 240g (typ.)

Technical Specifications

Item	Symbol	Conditions	Unit	Min.	Typ.	Max.
Absolute Maximum Ratings
Collector-Emitter voltage	V CES		V			600
Collector current	I C	Continuous, T C= 25C	A			400
Collector current pulse	-I C pulse	1ms	A			800
Junction temperature	T j		C			175
Storage temperature	T stg		C	-40		125
Isolation voltage	V iso	AC: 1min. Between terminal and copper base	V		2500
Screw torque		Mounting Terminals	N m	2.5 ~ 3.5		3.5
Electrical Characteristics
Collector-Emitter saturation voltage	V CE(sat) (chip)	V GE=15V, I C=400A, T j=150C	V		1.62	2.20
Collector-Emitter saturation voltage	V CE(sat) (chip)	V GE=15V, I C=400A, T j=125C	V		1.65
Collector-Emitter saturation voltage	V CE(sat) (chip)	V GE=15V, I C=400A, T j=25C	V		1.60	2.05
Forward on voltage	V F (chip)	I F=400A, T j=150C	V		1.50	1.75
Forward on voltage	V F (chip)	I F=400A, T j=125C	V		1.47
Forward on voltage	V F (chip)	I F=400A, T j=25C	V		1.65
Zero gate voltage collector current	I CES	V GE=0V, V CE=600V, T j=150C	mA			400
Zero gate voltage collector current	I CES	V GE=0V, V CE=600V, T j=125C	mA			300
Zero gate voltage collector current	I CES	V GE=0V, V CE=600V, T j=25C	mA			200
Gate-Emitter leakage current	I GES	V CE=0V, V GE=20V	nA			2.0
Gate-Emitter threshold voltage	V GE(th)	V CE=20V, I C=400mA	V	6.2	6.7	7.2
Input capacitance	C ies	V CE=10V, V GE=0V, =1MHz	nF		25.6
Turn-on time	t on	V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH	nsec		70
Turn-off time	t off	V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH	nsec		100
Reverse recovery time	t rr	I F=400A, T j=150C	nsec		1970
Reverse recovery time	t rr	I F=400A, T j=125C	nsec		800
Reverse recovery time	t rr	I F=400A, T j=25C	nsec
Thermal Resistance Characteristics
Thermal resistance (1device)	R th(j-c)	IGBT	C/W		0.076
Contact thermal resistance (1device)	R th(c-f)	with thermal compound	C/W		0.025