Discrete IGBT Fuji Electric FGW40N120HD designed for loss and high speed switching in power electronics
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Product Description
Fuji Electric FGW40N120HD Discrete IGBT
The FGW40N120HD is a high-speed V series Discrete IGBT designed for applications requiring low power loss, low switching surge, and high reliability. It offers excellent ruggedness, including RBSOA and SCSOA capabilities. This IGBT is suitable for use in uninterruptible power supplies, power conditioners, and power factor correction circuits.
Product Attributes
- Brand: Fuji Electric
- Product Type: Discrete IGBT (High-Speed V series)
Technical Specifications
| Item | Symbol | Conditions | Units | min. | typ. | max. | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | V | 1200 | ||||
| Gate-Emitter Voltage | VGES | DC | V | ±20 | |||
| Collector Current | IC@25 | TC=25°C,Tj=150°C | A | 70 | |||
| Collector Current | IC@100 | TC=100°C,Tj=150°C | A | 40 | |||
| Pulsed Collector Current | ICP | A | 120 | Note *1 | |||
| Turn-Off Safe Operating Area | VCE≤1200V,Tj≤175°C | A | 120 | ||||
| Diode Forward Current | IF@25 | TC=25°C,Tj=150°C | A | 52 | |||
| Diode Forward Current | IF@100 | TC=100°C,Tj=150°C | A | 30 | |||
| Diode Pulsed Current | IFP | A | 120 | Note *1 | |||
| Short Circuit Withstand Time | tSC | VCC≤600V,VGE=12V Tj≤150°C | µs | 5 | |||
| IGBT Max. Power Dissipation | PD_IGBT | TC=25°C | W | 340 | |||
| FWD Max. Power Dissipation | PD_FWD | TC=25°C | W | 190 | |||
| Operating Junction Temperature | Tj | °C | -40 | +175 | |||
| Storage Temperature | Tstg | °C | -55 | +175 | |||
| Electrical Characteristics | |||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | IC = 50µA, VGE = 0V | V | 1200 | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200V, VGE = 0V | µA | 250 | Tj=25°C | ||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200V, VGE = 0V | mA | 2 | Tj=175°C | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = ±20V | nA | 200 | |||
| Gate-Emitter Threshold Voltage | VGE (th) | VCE = +20V, IC = 40mA | V | 4.0 | 5.0 | 6.0 | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 40A | V | 1.8 | 2.34 | Tj=25°C | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 40A | V | 2.3 | Tj=175°C | ||
| Input Capacitance | Cies | VCE=25V VGE=0V f=1MHz | pF | 3000 | |||
| Output Capacitance | Coes | pF | 130 | ||||
| Reverse Transfer Capacitance | Cres | pF | 100 | ||||
| Gate Charge | QG | VCC = 600V IC = 40A VGE = 15V | nC | 300 | |||
| Turn-On Delay Time | td(on) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 35 | Tj = 25°C | ||
| Rise Time | tr | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 60 | Tj = 25°C | ||
| Turn-Off Delay Time | td(off) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 315 | Tj = 25°C | ||
| Fall Time | tf | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 40 | Tj = 25°C | ||
| Turn-On Energy | Eon | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 2.8 | Tj = 25°C | ||
| Turn-Off Energy | Eoff | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 1.8 | Tj = 25°C | ||
| Turn-On Delay Time | td(on) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 35 | Tj = 175°C | ||
| Rise Time | tr | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 60 | Tj = 175°C | ||
| Turn-Off Delay Time | td(off) | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 350 | Tj = 175°C | ||
| Fall Time | tf | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | ns | 75 | Tj = 175°C | ||
| Turn-On Energy | Eon | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 4.8 | Tj = 175°C | ||
| Turn-Off Energy | Eoff | VCC = 600V IC = 40A VGE = 15V RG = 10Ω L = 500µH | mJ | 3.0 | Tj = 175°C | ||
| FWD Characteristics | |||||||
| Forward Voltage Drop | VF | IF=30A | V | 2.2 | 2.8 | Tj=25°C | |
| Forward Voltage Drop | VF | IF=30A | V | 1.8 | Tj=175°C | ||
| Diode Reverse Recovery Time | trr1 | VCC=30V,IF = 3.0A -di/dt=200A/µs | ns | 49 | |||
| Diode Reverse Recovery Time | trr2 | VCC=600V IF=30A -diF/dt=200A/µs | µs | 0.44 | Tj=25°C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=600V IF=30A -diF/dt=200A/µs | µC | 1.35 | Tj=25°C | ||
| Diode Reverse Recovery Time | trr2 | VCC=600V IF=30A -diF/dt=200A/µs | µs | 0.70 | Tj=175°C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=600V IF=30A -diF/dt=200A/µs | µC | 6.00 | Tj=175°C | ||
| Thermal Resistance Characteristics | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | °C/W | 50 | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | °C/W | 0.439 | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | °C/W | 0.781 | ||||
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