Discrete IGBT Fuji Electric FGW75N60HD designed for low switching surge in power conditioners and UPS
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Product Description
Product Overview
The Fuji Electric FGW75N60HD is a high-speed Discrete IGBT from the V series, designed for applications requiring low power loss and high reliability. It features low switching surge and noise, along with robust ruggedness (RBSOA, SCSOA). This IGBT is suitable for use in uninterruptible power supplies, power conditioners, and power factor correction circuits.
Product Attributes
- Brand: Fuji Electric
- Product Series: Discrete IGBT (High-Speed V series)
- Model: FGW75N60HD
Technical Specifications
| Item | Symbols | Conditions | Units | min. | typ. | max. | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter voltage | VCES | V | 600 | ||||
| Gate-Emitter voltage | VGES | V | 20 | DC | |||
| Collector Current | IC@25 | TC=25C, Tj=150C | A | 100 | Note *1 | ||
| Collector Current | IC@100 | TC=100C, Tj=150C | A | 75 | |||
| Pulsed Collector Current | ICP | A | 225 | Note *2 | |||
| Turn-Off Safe Operating Area | VCE600V, Tj175C | A | 225 | ||||
| Diode Forward Current | IF@25 | A | 60 | Note *1 | |||
| Diode Forward Current | IF@100 | A | 35 | ||||
| Diode Pulsed Current | IFP | A | 225 | Note *1 | |||
| Short Circuit Withstand Time | tSC | VCC300V, VGE=12V Tj150C | s | 5 | |||
| IGBT Max. Power Dissipation | PD_IGBT | TC=25C | W | 500 | |||
| FWD Max. Power Dissipation | PD_FWD | TC=25C | W | 190 | |||
| Operating Junction Temperature | Tj | C | -40 | +175 | |||
| Storage Temperature | Tstg | C | -55 | +175 | |||
| Electrical Characteristics | |||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | IC = 250A, VGE = 0V | V | 600 | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 600V, VGE = 0V | A | 250 | Tj=25C | ||
| Zero Gate Voltage Collector Current | ICES | VCE = 600V, VGE = 0V | mA | 10 | Tj=175C | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = 20V | nA | 200 | |||
| Gate-Emitter Threshold Voltage | VGE (th) | VCE = +20V, IC = 75mA | V | 4.0 | 5.0 | 6.0 | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 75A | V | 1.50 | 1.95 | Tj=25C | |
| Collector-Emitter Saturation Voltage | VCE (sat) | VGE = +15V, IC = 75A | V | 1.80 | Tj=175C | ||
| Input Capacitance | Cies | VCE=25V VGE=0V f=1MHz | pF | 6150 | |||
| Output Capacitance | Coes | pF | 300 | ||||
| Reverse Transfer Capacitance | Cres | pF | 240 | ||||
| Gate Charge | QG | VCC = 400V IC = 75A VGE = 15V | nC | 460 | |||
| Turn-On Delay Time | td(on) | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 45 | Tj = 25C | ||
| Rise Time | tr | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 130 | Tj = 25C | ||
| Turn-Off Delay Time | td(off) | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 450 | Tj = 25C | ||
| Fall Time | tf | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 105 | Tj = 25C | ||
| Turn-On Energy | Eon | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | mJ | 3.0 | Tj = 25C | ||
| Turn-Off Energy | Eoff | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | mJ | 4.2 | Tj = 25C | ||
| Turn-On Delay Time | td(on) | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 45 | Tj = 175C | ||
| Rise Time | tr | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 130 | Tj = 175C | ||
| Turn-Off Delay Time | td(off) | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 490 | Tj = 175C | ||
| Fall Time | tf | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | ns | 120 | Tj = 175C | ||
| Turn-On Energy | Eon | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | mJ | 4.3 | Tj = 175C | ||
| Turn-Off Energy | Eoff | VCC = 400V IC = 75A VGE = 15V RG = 10 L = 500H | mJ | 4.8 | Tj = 175C | ||
| FWD Characteristics | |||||||
| Forward Voltage Drop | VF | IF=35A | V | 2.0 | 2.6 | Tj=25C | |
| Forward Voltage Drop | VF | IF=35A | V | 1.4 | Tj=175C | ||
| Diode Reverse Recovery Time | trr1 | VCC=30V,IF = 3.5A -di/dt=200A/s | ns | 26 | 36 | ||
| Diode Reverse Recovery Time | trr2 | VCC=400V IF=35A -diF/dt=200A/s | s | 0.05 | Tj=25C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V IF=35A -diF/dt=200A/s | C | 0.12 | Tj=25C | ||
| Diode Reverse Recovery Time | trr2 | VCC=400V IF=35A -diF/dt=200A/s | s | 0.19 | Tj=175C | ||
| Diode Reverse Recovery Charge | Qrr | VCC=400V IF=35A -diF/dt=200A/s | C | 1.10 | Tj=175C | ||
| Thermal Resistance Characteristics | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | C/W | 50 | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | C/W | 0.298 | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | C/W | 0.781 | ||||
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Sellina