General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic circuits in SOT23 package

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Product Description

MMBT3904 TRANSISTOR (NPN)

The MMBT3904 is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers a range of electrical characteristics suitable for various electronic circuits. The device is available in a SOT-23 package.

Product Attributes

Brand: FUXIN (implied by www.fuxinsemi.com)
Type: NPN Transistor
Complementary to: MMBT3906
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			40	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector cut-off current	ICEX	VCE=30V, VEB(off)=3V			50	nA
Collector cut-off current	ICBO	VCB= 60V, IE=0			100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0			100	nA
DC current gain	hFE(1)	VCE=1V, IC=10mA	100		300
	hFE(2)	VCE=1V, IC=50mA			60
	hFE(3)	VCE=1V, IC=100mA			30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA			0.95	V
Transition frequency	fT	VCE=20V,IC=10mA, f=100MHz			300	MHz
Delay time	td	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA			35	ns
Rise time	tr	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA			35	ns
Storage time	ts	VCC=3V, IC=10mA, IB1= IB2=1mA			200	ns
Fall time	tf	VCC=3V, IC=10mA, IB1= IB2=1mA			50	ns
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				200	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance From Junction To Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150