SOT23 package NPN transistor FUXINSEMI BCV47 featuring high collector current and gain for circuits

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The FG BCV47 is an NPN transistor designed for high performance, featuring high collector current and high current gain. It is supplied in a SOT-23 package.

Product Attributes

Brand: FG
Type: Transistor (NPN)
Package: SOT-23
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				80	V
Collector-Emitter Voltage	VCEO				60	V
Emitter-Base Voltage	VEBO				10	V
Collector Current	IC				500	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance Junction To Ambient	RJA			416		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	80			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA, IB=0	60			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	10			V
Collector cut-off current	ICBO	VCB=60V, IE=0		0.1		A
Emitter cut-off current	IEBO	VEB=4V, IC=0		0.1		A
DC current gain	hFE	VCE=1V, IC=100A		2000
DC current gain	hFE	VCE=5V, IC=10mA		4000
DC current gain	hFE	VCE=5V, IC=100mA		10000
DC current gain	hFE	VCE=5V, IC=0.5A		2000
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=0.1mA		1		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=0.1mA		1.5		V
Transition frequency	fT	VCE=5V,IC=50mA, f=100MHz		170		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		3.5		pF