NPN Transistor FUXINSEMI BC807-25 General Purpose SOT-23 Package High DC Current Gain Semiconductor

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Product Description

BC807 NPN Transistor

The BC807 is an NPN epitaxial planar die construction transistor, ideally suited for automatic insertion. A complementary PNP type (BC817) is available. It offers a high DC current gain and is designed for general-purpose applications.

Product Attributes

Brand: FUXINSEMICONDUCTOR
Complementary Type: BC817 (PNP)
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Breakdown Voltage	VCBO	IC= -10A, IE=0	-50		V
Collector-Emitter Breakdown Voltage	VCEO	IC= -10mA, IB=0	-45		V
Emitter-Base Breakdown Voltage	VEBO	IE= -1A, IC=0	-5		V
Collector Cut-off Current	ICBO	VCB= -45V, IE=0		-0.1	A
Emitter Cut-off Current	IEBO	VEB= -4V, IC=0		-0.1	A
DC Current Gain	hFE(1)	VCE= -1V, IC= -100mA	100	600
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB= -50mA		-0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= -500mA, IB= -50mA		-1.2	V
Transition Frequency	fT	VCE= -5V, IC= -10mA, f=100MHz	100		MHz
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)		300	mW
Thermal Resistance Junction To Ambient	RJA	(Ta=25 unless otherwise noted)		417	/W
Operation Junction and Storage Temperature Range	TJ,Tstg	(Ta=25 unless otherwise noted)	-55	+150