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Low Gate Charge N Channel MOSFET ElecSuper BSS123LT1G Suitable for Power Switch and Charging Circuits

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Product Description

Product Overview

The BSS123LT1G is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.

Product Attributes

  • Brand: ElecSuper
  • Origin: Not specified
  • Material: Halogen free
  • Color: Not specified
  • Certifications: UL 94V-0

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings & Thermal Characteristics
Drain-Source VoltageBVDSS100V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTA=25°C0.29A
Continuous Drain CurrentIDTA=70°C0.20A
Maximum Power DissipationPD0.35W
Operating Junction TemperatureTJ150°C
Lead TemperatureTL260°C
Storage Temperature RangeTstg-55150°C
Junction-to-Ambient Thermal ResistanceRθJAt ≤10s357°°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA100V
Zero Gate Voltage Drain CurrentIDSSVDS=100V, VGS=0V100nA
Gate-to-Source Leakage CurrentIGSSVDS=0V, VGS=±20V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA1.01.82.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=0.2A2.73.5Ω
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=0.18A2.954.2Ω
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V29pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=25V2.8pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=25V2.0pF
Gate ResistanceRgf=1MHz1.3Ω
Forward VoltageVSDVGS=0V, IS=0.2A0.451.5V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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