Power Management and Load Switching Solutions Featuring FM 2060A N MOS N Channel Trench Power MOSFET
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 2060A is an N-Channel Trench Power MOSFET featuring advanced trench technology for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It offers high power and current handling capability, making it suitable for a wide variety of applications including battery protection, load switching, and power management. This lead-free product has undergone 100% UIS and Vds testing.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Origin: China
- Package: TO-252 (DPAK)
- Certifications: 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | VGS=0V | 20 | V | ||
| Gate-Source Voltage | VGS | VDS=0V | 12 | V | ||
| Drain Current-Continuous | ID | Tc=25 (Note1) | 60 | A | ||
| Drain Current-Continuous | ID | Tc=100 | 42 | A | ||
| Drain Current-Continuous@ Current-Pulsed | IDM | (Note 2) | 202 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 62 | W | ||
| Maximum Power Dissipation | PD | Tc=100 | 38 | W | ||
| Avalanche energy | EAS | (Note 3) | 216 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 155 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | - | 1.95 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.45 | 0.7 | 1.0 | V |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 35 | S | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A(Tc=25) | 4.9 | 6.5 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A (Tc=125) | 6.5 | 11 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=15A | 6.2 | 8.6 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V, f=1.0MHz | 2950 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V, f=1.0MHz | 389 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, f=1.0MHz | 305 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 1.3 | |||
| Turn-on Delay Time | td(on) | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 19 | nS | ||
| Turn-on Rise Time | tr | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 55 | nS | ||
| Turn-Off Delay Time | td(off) | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 78 | nS | ||
| Turn-Off Fall Time | tf | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 29 | nS | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=12A | 36 | nC | ||
| Gate-Source Charge | Qgs | VGS=4.5V, VDS=10V, ID=12A | 5 | nC | ||
| Gate-Drain Charge | Qgd | VGS=4.5V, VDS=10V, ID=12A | 14 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Current(Body Diode) | ISD | 60 | A | |||
| Forward on Voltage | VSD | VGS=0V,IS=20A | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, dI/dt=100A/s | 26 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, dI/dt=100A/s | 12 | nC | ||
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Sellina