Compact Fuji Electric FGW40XS120C IGBT Module with Halogen Free Molding Compound and RoHS Compliance

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Product Description

Product Overview

The FGW40XS120C is a Discrete IGBT from Fuji Electric's XS-series, designed for high-voltage and high-current applications. It features Pb-free lead terminals and a halogen-free molding compound, making it RoHS compliant. This IGBT is suitable for demanding applications such as Uninterrupted Power Supplies, PV Power Conditioners, and Inverter welding machines.

Product Attributes

Brand: Fuji Electric
Series: XS-series
Certifications: Pb-free lead terminal, RoHS compliant, Halogen-free molding compound

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit	Remarks
Absolute Maximum Ratings
Collector-Emitter Voltage	VCES				1200	V
Gate-Emitter Voltage	VGES			±20		V
Transient Gate-Emitter Voltage		tp < 1 μs		±30		V
DC Collector Current	IC@25	TC = 25 °C			63	A
DC Collector Current	IC@100	TC = 100 °C			40	A
Pulsed Collector Current	ICP				160	A	Note *1
Turn-Off Safe Operating Area		VCE ≤ 1200 V, Tvj ≤ 175 °C		-160		A
Diode Forward Current	IF@25				63	A
Diode Forward Current	IF@100				40	A
Diode Pulsed Current	IFP				160	A	Note *1
IGBT Max. Power Dissipation	Ptot_IGBT	TC = 25 °C			351	W
FWD Max. Power Dissipation	Ptot_FWD	TC = 25 °C			127	W
Operating Junction Temperature	Tvj		-40		+175	°C
Storage Temperature	Tstg		-55		+175	°C
Electrical Characteristics
Zero Gate Voltage Collector Current	ICES	VCE = 1200 V, VGE = 0 V, Tvj = 25 °C			250	μA
Zero Gate Voltage Collector Current	ICES	VCE = 1200 V, VGE = 0 V, Tvj = 175 °C			2	mA
Gate-Emitter Leakage Current	IGES	VCE = 0 V, VGE = ± 20 V			200	nA
Gate-Emitter Threshold Voltage	VGE(th)	VCE = 20 V, IC = 40 mA	4.9	5.5	6.1	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE = 15 V, IC = 40 A, Tvj = 25 °C		1.60	1.90	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE = 15 V, IC = 40 A, Tvj = 125 °C		2.05	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE = 15 V, IC = 40 A, Tvj = 175 °C		2.15	-	V
Input Capacitance	Cies	VCE = 25 V, VGE = 0 V, f = 1 MHz		4700	-	pF
Output Capacitance	Coes			66	-	pF
Reverse Transfer Capacitance	Cres			38	-	pF
Gate Charge	QG	VCC = 600 V, IC = 40 A, VGE = 15 V		250	-	nC
Turn-On Delay Time	td(on)	VCC = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C		45	-	ns	Energy loss include tail and FWD reverse recovery.
Rise Time	tr			32	-	ns
Turn-Off Delay Time	td(off)			250	-	ns
Fall Time	tf			60	-	ns
Turn-On Energy	Eon			1.4	-	mJ
Turn-Off Energy	Eoff			1.7	-	mJ
Turn-On Delay Time	td(on)	VCC = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, Tvj = 175 °C		44	-	ns	Energy loss include tail and FWD reverse recovery.
Rise Time	tr			26	-	ns
Turn-Off Delay Time	td(off)			280	-	ns
Fall Time	tf			130	-	ns
Turn-On Energy	Eon			2.2	-	mJ
Turn-Off Energy	Eoff			2.0	-	mJ
Forward Voltage Drop	VF	IF = 40 A, Tvj = 25 °C		2.90	3.30	V
Forward Voltage Drop	VF	IF = 40 A, Tvj = 125 °C		3.20	-	V
Forward Voltage Drop	VF	IF = 40 A, Tvj = 175 °C		3.20	-	V
Diode Reverse Recovery Time	trr	VCC = 600 V, IF = 40 A, -diF/dt = 300 A/μs, Tvj = 25 °C		230	-	ns
Diode Reverse Recovery Charge	Qrr			1.10	-	μC
Diode Reverse Recovery Time	trr	VCC = 600 V, IF = 40 A, -diF/dt = 300 A/μs, Tvj = 175 °C		500	-	ns
Diode Reverse Recovery Charge	Qrr			2.30	-	μC
Thermal Resistance
Thermal Resistance, Junction-Ambient	Rth(j-a)		-	-	50	°C/W
Thermal Resistance, IGBT Junction to Case	Rth(j-c)_IGBT		-	-	0.427	°C/W
Thermal Resistance, FWD Junction to Case	Rth(j-c)_FWD		-	-	1.176	°C/W